Samsonova Tat'yana Pavlovna

Publications in Math-Net.Ru

1. High-voltage 4$H$-SiC based avalanche diodes with a negative beve
   
   Fizika i Tekhnika Poluprovodnikov, 55:4 (2021),  349–353
2. High-voltage 4$H$-SiC Schottky diodes with field-plate edge termination
   
   Fizika i Tekhnika Poluprovodnikov, 55:2 (2021),  188–194
3. High-voltage avalanche 4$H$-SiC diodes with a protective semi-insulating area
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:6 (2021),  48–50
4. Formation of SiC mesastructures with gently sloping sidewalls by dry selective etching through a photoresist mask
   
   Zhurnal Tekhnicheskoi Fiziki, 90:6 (2020),  997–1000
5. Micro-profiling of 4$H$-SiC by dry etching to form a Schottky barrier diode
   
   Fizika i Tekhnika Poluprovodnikov, 54:1 (2020),  97–102
6. Correction of the reverse recovery characteristics of high-voltage 4$H$-SiC junction diodes using proton irradiation
   
   Fizika i Tekhnika Poluprovodnikov, 53:6 (2019),  862–864
7. Simulation of transient processes in 4$H$-SiC based semiconductor devices (taking into account the incomplete ionization of dopants in the atlas module of the SILVACO TCAD software package)
   
   Fizika i Tekhnika Poluprovodnikov, 53:3 (2019),  407–410
8. Avalanche breakdown stability of high voltage (1430 V) 4$H$-SiC $p^{+}$–$n_{0}$–$n^{+}$ diodes
   
   Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1527–1531
9. Effect of low-dose proton irradiation on the electrical characteristics of 4$H$-SiC junction diodes
   
   Fizika i Tekhnika Poluprovodnikov, 52:10 (2018),  1187–1190
10. The influence of heat treatment on the electrical characteristics of semi-insulating sic layers obtained by irradiating $n$-SiC with high-energy argon ions
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:6 (2018),  11–16
11. 4$H$-SiC based subnanosecond (150 ps) high-voltage (1600 V) current breakers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:3 (2018),  3–8
12. Current–voltage characteristics of high-voltage 4$H$-SiC $p^{+}$–$n_{0}$–$n^{+}$ diodes in the avalanche breakdown mode
    
    Fizika i Tekhnika Poluprovodnikov, 51:3 (2017),  390–394
13. Semi-insulating 4$H$-SiC layers formed by the implantation of high-energy (53 MeV) argon ions into $n$-type epitaxial films
    
    Fizika i Tekhnika Poluprovodnikov, 50:7 (2016),  937–940
14. Field dependence of the electron drift velocity along the hexagonal axis of 4$H$-SiC
    
    Fizika i Tekhnika Poluprovodnikov, 50:7 (2016),  900–904
15. Dynamic characteristics of 4H-SiC drift step recovery diodes
    
    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1558–1562
16. Effect of impurity impact ionization on the dynamic characteristics of 4H-SiC $p^+$–$n$–$n^+$ diodes at low temperatures (77 K)
    
    Fizika i Tekhnika Poluprovodnikov, 49:7 (2015),  999–1002
17. Resistance of 4H-SiC Schottky barriers at high forward-current densities
    
    Fizika i Tekhnika Poluprovodnikov, 49:7 (2015),  951–955
18. Effect of rapid thermal annealing on the current-voltage characteristics of 4H-SiC Schottky diodes
    
    Fizika i Tekhnika Poluprovodnikov, 47:1 (2013),  83–86
19. Low-temperature (77–300 K) current-voltage characteristics of 4H-SiC $p^+$–$p$–$n^+$ diodes: Effect of impurity breakdown in the $p$-type base
    
    Fizika i Tekhnika Poluprovodnikov, 46:4 (2012),  548–550
20. Leakage currents in 4H-SiC JBS diodes
    
    Fizika i Tekhnika Poluprovodnikov, 46:3 (2012),  411–415
21. I–V characteristics of high-voltage 4H-SiC diodes with a 1.1-eV Schottky barrier
    
    Fizika i Tekhnika Poluprovodnikov, 45:10 (2011),  1427–1430
22. A DLTS study of 4H-SiC-based $p$–$n$ junctions fabricated by boron implantation
    
    Fizika i Tekhnika Poluprovodnikov, 45:10 (2011),  1358–1362
23. High-voltage (3.3 kV) 4H-SiC JBS diodes
    
    Fizika i Tekhnika Poluprovodnikov, 45:5 (2011),  677–681
24. Bistable low temperature (77 K) impurity breakdown in $p$-type 4H-SiC
    
    Fizika i Tekhnika Poluprovodnikov, 44:7 (2010),  902–904
25. Excess leakage currents in high-voltage 4H-SiC Schottky diodes
    
    Fizika i Tekhnika Poluprovodnikov, 44:5 (2010),  680–683