Kudoyarov Mikhail Fedorovich

Publications in Math-Net.Ru

1. Irradiation with argon ions of Schottky diodes based on 4H-SiC
   
   Fizika i Tekhnika Poluprovodnikov, 58:9 (2024),  493–496
2. Irradiation with argon ions of Cr/4H-SiC-photodetectors
   
   Fizika i Tekhnika Poluprovodnikov, 56:2 (2022),  254–258
3. High-voltage 4$H$-SiC Schottky diodes with field-plate edge termination
   
   Fizika i Tekhnika Poluprovodnikov, 55:2 (2021),  188–194
4. High-voltage avalanche 4$H$-SiC diodes with a protective semi-insulating area
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:6 (2021),  48–50
5. Measurements of $\gamma$- and neutron-radiation spectra in nuclear reactions with $^{3}$He and $^{9}$Be ions
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:3 (2021),  3–6
6. Structural and optical characteristics of 4$H$-SiC UV detectors irradiated with argon ions
   
   Fizika i Tekhnika Poluprovodnikov, 54:11 (2020),  1244–1248
7. Correction of the reverse recovery characteristics of high-voltage 4$H$-SiC junction diodes using proton irradiation
   
   Fizika i Tekhnika Poluprovodnikov, 53:6 (2019),  862–864
8. A study of the residual gas composition in the vacuum system of the cyclotron of the Ioffe Physical Technical Institute
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:16 (2019),  30–32
9. Effect of low-dose proton irradiation on the electrical characteristics of 4$H$-SiC junction diodes
   
   Fizika i Tekhnika Poluprovodnikov, 52:10 (2018),  1187–1190
10. Diversity of properties of device structures based on group-III nitrides, related to modification of the fractal-percolation system
    
    Fizika i Tekhnika Poluprovodnikov, 52:7 (2018),  804–811
11. The influence of heat treatment on the electrical characteristics of semi-insulating sic layers obtained by irradiating $n$-SiC with high-energy argon ions
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:6 (2018),  11–16
12. Self-organization processes in polysiloxane block copolymers, initiated by modifying fullerene additives
    
    Fizika Tverdogo Tela, 59:8 (2017),  1632–1637
13. Semi-insulating 4$H$-SiC layers formed by the implantation of high-energy (53 MeV) argon ions into $n$-type epitaxial films
    
    Fizika i Tekhnika Poluprovodnikov, 50:7 (2016),  937–940
14. Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:21 (2016),  39–46
15. Track membranes based on a 20-$\mu$m-thick polyethylene terephthalate film obtained with a beam of argon ions having a range shorter than the film thickness
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:13 (2016),  87–95
16. Possibilities of sterilization by track membranes
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:18 (2011),  81–86