Lebedeva Natal'ya Mikailovna

Publications in Math-Net.Ru

1. Контактные системы “мостикового” типа в InGaAs/InP фотоэлектрических преобразователях
   
   Zhurnal Tekhnicheskoi Fiziki, 96:2 (2026),  345–350
2. Longwave ($\lambda_{0.1}$ = 10 $\mu$m, 296 K) infrared photodetectors based on InAsSb$_{0.38}$ solid solution
   
   Optics and Spectroscopy, 131:11 (2023),  1505–1508
3. Modification in adsorption properties of graphene during the development of viral biosensors
   
   Fizika i Tekhnika Poluprovodnikov, 56:12 (2022),  1137–1143
4. High-voltage 4$H$-SiC based avalanche diodes with a negative beve
   
   Fizika i Tekhnika Poluprovodnikov, 55:4 (2021),  349–353
5. TCAD simulation of high-voltage 4$H$-SiC diodes with an edge semi-insulating region
   
   Fizika i Tekhnika Poluprovodnikov, 55:2 (2021),  201–206
6. High-voltage 4$H$-SiC Schottky diodes with field-plate edge termination
   
   Fizika i Tekhnika Poluprovodnikov, 55:2 (2021),  188–194
7. High-voltage avalanche 4$H$-SiC diodes with a protective semi-insulating area
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:6 (2021),  48–50
8. Avalanche breakdown in 4$H$-SiC Schottky diodes: reliability aspects
   
   Zhurnal Tekhnicheskoi Fiziki, 90:12 (2020),  2133–2138
9. Formation of SiC mesastructures with gently sloping sidewalls by dry selective etching through a photoresist mask
   
   Zhurnal Tekhnicheskoi Fiziki, 90:6 (2020),  997–1000
10. Edge-termination technique for high-voltage mesa-structure 4$H$-SiC devices: negative beveling
    
    Fizika i Tekhnika Poluprovodnikov, 54:2 (2020),  207–211
11. Micro-profiling of 4$H$-SiC by dry etching to form a Schottky barrier diode
    
    Fizika i Tekhnika Poluprovodnikov, 54:1 (2020),  97–102
12. Plasmon resonance in new AsSb–AlGaAs metal–semiconductor metamaterials
    
    Fizika i Tekhnika Poluprovodnikov, 49:12 (2015),  1635–1639
13. MBE-grown GaAs:Si/GaAs:Be tunnel diodes for multijunction solar cells
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:18 (2015),  82–88
14. Fröhlich resonance in the AsSb/AlGaAs system
    
    Fizika Tverdogo Tela, 56:10 (2014),  1891–1895
15. Dark current-voltage characteristic of triple-junction solar cells: Their relation with the efficiency and the influence of passivating treatments
    
    Zhurnal Tekhnicheskoi Fiziki, 84:6 (2014),  92–97