Vasev Andrei Vasil'evich

Publications in Math-Net.Ru

1. InGaP/GaAs/Ge triple-junction solar cell with a thinned germanium substrate
   
   Zhurnal Tekhnicheskoi Fiziki, 94:5 (2024),  783–794
2. GaP$_x$As$_{1-x}$ solid solution growth by molecular beam epitaxy: phenomenological description of the $x$ dependence from growth conditions on GaAs(001) substrate
   
   Fizika i Tekhnika Poluprovodnikov, 57:2 (2023),  79–88
3. Arrays of quasi-one-dimensional GaAs nanocrystals grown on the oxidized surface of the Si/GaAs(001) heterostructure: effect of the Si epitaxial layer on the array structure
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:3 (2023),  37–41
4. Molecular beam epitaxy of GaSb on vicinal Si(001) substrates: influence of the conditions of layer nucleation on their structural and optical properties
   
   Fizika i Tekhnika Poluprovodnikov, 56:10 (2022),  980–992
5. Formation of InAs/GaP heterostructures with quantum wells on silicon substrates by molecular beam epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 55:2 (2021),  139–146
6. Effect of the crystallographic orientation of GaSb films on their structural properties during MBE heteroepitaxy on vicinal Si(001) substrates
   
   Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1289–1295
7. A mask based on a Si epitaxial layer for the self-catalytic nanowire growth on GaAs (111)$B$ and GaAs (100) substrates
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:4 (2020),  11–14
8. A lightweight flexible solar cell based on a heteroepitaxial InGaP/GaAs structure
   
   Zhurnal Tekhnicheskoi Fiziki, 89:7 (2019),  1071–1078
9. The growth of InAs$_{x}$Sb$_{1-x}$ solid solutions on miscuted GaAs(001) substrates by molecular-beam epitaxy method
   
   Fizika i Tekhnika Poluprovodnikov, 53:4 (2019),  512–519
10. Kinetics of structural changes on GaSb(001) singular and vicinal surfaces during the UHV annealing
    
    Fizika i Tekhnika Poluprovodnikov, 52:5 (2018),  525
11. Zinc diffusion into InP via a narrow gap from a planar Zn$_{3}$P$_{2}$-based source
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:14 (2018),  19–25