Yesin Mikhail Yur'evich

Publications in Math-Net.Ru

1. Study of Si(100) surface step convergence kinetics
   
   Fizika Tverdogo Tela, 65:2 (2023),  173–179
2. Formation of InAs/GaP heterostructures with quantum wells on silicon substrates by molecular beam epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 55:2 (2021),  139–146
3. Effect of the crystallographic orientation of GaSb films on their structural properties during MBE heteroepitaxy on vicinal Si(001) substrates
   
   Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1289–1295
4. A mask based on a Si epitaxial layer for the self-catalytic nanowire growth on GaAs (111)$B$ and GaAs (100) substrates
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:4 (2020),  11–14
5. The growth of InAs$_{x}$Sb$_{1-x}$ solid solutions on miscuted GaAs(001) substrates by molecular-beam epitaxy method
   
   Fizika i Tekhnika Poluprovodnikov, 53:4 (2019),  512–519
6. Formation of a stepped Si(100) surface and its effect on the growth of Ge islands
   
   Fizika i Tekhnika Poluprovodnikov, 52:3 (2018),  409–413
7. Zinc diffusion into InP via a narrow gap from a planar Zn$_{3}$P$_{2}$-based source
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:14 (2018),  19–25
8. The structural state of epitaxial GaP films of different polarities grown on misoriented Si(001) substrates
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:4 (2017),  64–71
9. Strained multilayer structures with pseudomorphic GeSiSn layers
   
   Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1610–1614
10. Inelastic electron scattering cross-section spectroscopy of Ge$_x$Si$_{1-x}$ nanoheterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 48:2 (2014),  237–241