Petrushkov Mikhail Olegovich

Publications in Math-Net.Ru

1. InGaP/GaAs/Ge triple-junction solar cell with a thinned germanium substrate
   
   Zhurnal Tekhnicheskoi Fiziki, 94:5 (2024),  783–794
2. Formation of self-assembled quantum dots during GaSbP deposition on AlP surface
   
   Fizika i Tekhnika Poluprovodnikov, 58:4 (2024),  185–191
3. GaP$_x$As$_{1-x}$ solid solution growth by molecular beam epitaxy: phenomenological description of the $x$ dependence from growth conditions on GaAs(001) substrate
   
   Fizika i Tekhnika Poluprovodnikov, 57:2 (2023),  79–88
4. Arrays of quasi-one-dimensional GaAs nanocrystals grown on the oxidized surface of the Si/GaAs(001) heterostructure: effect of the Si epitaxial layer on the array structure
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:3 (2023),  37–41
5. Molecular beam epitaxy of GaSb on vicinal Si(001) substrates: influence of the conditions of layer nucleation on their structural and optical properties
   
   Fizika i Tekhnika Poluprovodnikov, 56:10 (2022),  980–992
6. Formation of InAs/GaP heterostructures with quantum wells on silicon substrates by molecular beam epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 55:2 (2021),  139–146
7. Effect of the crystallographic orientation of GaSb films on their structural properties during MBE heteroepitaxy on vicinal Si(001) substrates
   
   Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1289–1295
8. A mask based on a Si epitaxial layer for the self-catalytic nanowire growth on GaAs (111)$B$ and GaAs (100) substrates
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:4 (2020),  11–14
9. A lightweight flexible solar cell based on a heteroepitaxial InGaP/GaAs structure
   
   Zhurnal Tekhnicheskoi Fiziki, 89:7 (2019),  1071–1078
10. GaAs/GaP quantum-well heterostructures grown on Si substrates
    
    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1167–1171
11. The growth of InAs$_{x}$Sb$_{1-x}$ solid solutions on miscuted GaAs(001) substrates by molecular-beam epitaxy method
    
    Fizika i Tekhnika Poluprovodnikov, 53:4 (2019),  512–519
12. Heterostructures with InAs/AlAs quantum wells and quantum dots grown on GaAs/Si hybrid substrates
    
    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1373–1379
13. Zinc diffusion into InP via a narrow gap from a planar Zn$_{3}$P$_{2}$-based source
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:14 (2018),  19–25
14. X-ray diffraction analysis of epitaxial layers with the properties of a dislocation filter
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:13 (2018),  19–27
15. The structural state of epitaxial GaP films of different polarities grown on misoriented Si(001) substrates
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:4 (2017),  64–71