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Publications in Math-Net.Ru
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Effect of pretreatment of the silicon substrate on the properties of GaN films grown by chloride–hydride vapor-phase epitaxy
Fizika i Tekhnika Poluprovodnikov, 55:8 (2021), 704–710
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Structural and spectroscopic studies of epitaxial GaAs layers grown on compliant substrates based on a superstructure layer and protoporous silicon
Fizika i Tekhnika Poluprovodnikov, 55:1 (2021), 86–95
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Influence of a nanoporous silicon layer on the practical implementation and specific features of the epitaxial growth of GaN layers on SiC/$por$-Si/$c$-Si templates
Fizika i Tekhnika Poluprovodnikov, 54:5 (2020), 491–503
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Effect of a $por$-Si buffer layer on the structure and morphology of epitaxial In$_{x}$Ga$_{1-x}$N/Si(111) heterostructures
Fizika i Tekhnika Poluprovodnikov, 52:13 (2018), 1553–1562
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Effect of misorientation and preliminary etching of the substrate on the structural and optical properties of integrated GaAs/Si(100) heterostructures produced by vapor phase epitaxy
Fizika i Tekhnika Poluprovodnikov, 52:8 (2018), 881–890
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Experimental studies of the effects of atomic ordering in epitaxial Ga$_{x}$In$_{1-x}$P on their optical properties
Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1160–1167
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Experimental studies of the effects of atomic ordering in epitaxial Ga$_{x}$In$_{1-x}$P alloys on their structural and morphological properties
Fizika i Tekhnika Poluprovodnikov, 51:8 (2017), 1131–1137
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