Tyschenko Ida Evgen'evna

Publications in Math-Net.Ru

1. Structural changes in nanometer-thick silicon-on-insulator films during high-temperature annealing
   
   Fizika i Tekhnika Poluprovodnikov, 56:3 (2022),  320–327
2. Germanium diffusion from buried SiO$_2$ layer and SiGe phase formation
   
   Fizika i Tekhnika Poluprovodnikov, 56:2 (2022),  192–198
3. Diffusion of In atoms in SiO$_{2}$ films implanted with As$^{+}$ ions
   
   Fizika i Tekhnika Poluprovodnikov, 55:3 (2021),  217–223
4. Structural and optical-phonon properties of InSb nanocrystals synthesized in Si and SiO$_2$ matrices
   
   Fizika i Tekhnika Poluprovodnikov, 55:1 (2021),  59–68
5. Diffusion and interaction of In and As implanted into SiO$_2$ films
   
   Fizika i Tekhnika Poluprovodnikov, 53:8 (2019),  1023–1029
6. Raman scattering in InSb spherical nanocrystals ion-synthesized in silicon-oxide films
   
   Fizika i Tekhnika Poluprovodnikov, 53:4 (2019),  502–507
7. Anodic oxidation of hydrogen-transferred silicon-on-insulator layers
   
   Fizika i Tekhnika Poluprovodnikov, 53:2 (2019),  253–257
8. Bonding energy of silicon and sapphire wafers at elevated temperatures of joining
   
   Fizika i Tekhnika Poluprovodnikov, 53:1 (2019),  65–69
9. Ion-beam synthesis of the crystalline Ge phase in SiO$_{x}$N$_{y}$ films upon annealing under high pressure
   
   Fizika i Tekhnika Poluprovodnikov, 52:2 (2018),  280–284
10. Diffusion-Controlled growth of Ge nanocrystals in SiO$_{2}$ films under conditions of ion synthesis at high pressure
    
    Fizika i Tekhnika Poluprovodnikov, 51:10 (2017),  1414–1419
11. Specific features of the ion-beam synthesis of Ge nanocrystals in SiO$_{2}$ thin films
    
    Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1289–1294
12. An origin of orange (2 eV) photoluminescence in SiO$_2$ films implanted with high Si$^+$-ion doses
    
    Fizika i Tekhnika Poluprovodnikov, 49:9 (2015),  1212–1216
13. Effect of hydrostatic pressure during the annealing of silicon-on-insulator films implanted with a high hydrogen-ion dose
    
    Fizika i Tekhnika Poluprovodnikov, 48:10 (2014),  1339–1343
14. Ion-beam synthesis of InSb nanocrystals in the buried SiO$_2$ layer of a silicon-on-insulator structure
    
    Fizika i Tekhnika Poluprovodnikov, 48:9 (2014),  1228–1233
15. Crystallization induced by thermal annealing with millisecond pulses in silicon-on-insulator films implanted with high doses of hydrogen ions
    
    Fizika i Tekhnika Poluprovodnikov, 47:5 (2013),  591–597
16. Quantum-confinement effect in silicon-on-insulator films implanted with high doses of hydrogen ions
    
    Fizika i Tekhnika Poluprovodnikov, 46:10 (2012),  1309–1313
17. Anodization of nanoscale Si layers in silicon-on-insulator structures
    
    Fizika i Tekhnika Poluprovodnikov, 45:8 (2011),  1121–1125
18. Silicon-on-insulator structures with a nitrogenated buried SiO$_2$ layer: Preparation and properties
    
    Fizika i Tekhnika Poluprovodnikov, 45:3 (2011),  335–342
19. Ascending diffusion of impurity due to ion irradiation of heated silicon: numerical modeling
    
    Fizika i Tekhnika Poluprovodnikov, 26:11 (1992),  1977–1982
20. Growth of monocrystalline $\alpha\text{-Si}_{3}\text{N}_{4}$ in buried layers produced by low-intensity implantation of N$^{+}$ ions into heated silicon
    
    Fizika i Tekhnika Poluprovodnikov, 26:8 (1992),  1390–1393