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Publications in Math-Net.Ru
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Analysis and comparison of characteristics of the uncooled millimeter-wave diode detectors within a generalized theoretical model
Zhurnal Tekhnicheskoi Fiziki, 94:6 (2024), 881–887
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Electrophysical properties of multilayer DLC films with different $sp^3$-phase contents
Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:17 (2024), 30–33
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A three-millimeter-wave array radar with a mirror objective
Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:14 (2024), 33–36
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Thermal annealing of multilayer films of diamond-like carbon with a variable content of $sp^3$-phase
Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:13 (2024), 12–15
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Surface treatment of gallium arsenide after etching in C$_2$F$_5$Cl-plasma
Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:19 (2023), 39–42
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Array radio imaging based on heterodyne detection with application of the continuous-wave radar technique
Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:1 (2022), 47–50
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Experimental studies of modification of the characteristics of GaAs structures with Schottky contacts after exposure to fast neutrons
Fizika i Tekhnika Poluprovodnikov, 55:10 (2021), 846–849
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Study of undoped nanocrystalline diamond films grown by microwave plasma-assisted chemical vapor deposition
Fizika i Tekhnika Poluprovodnikov, 55:1 (2021), 49–58
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Morphology and structure of defected niobium oxide nonuniform arrays formed by anodizing bilayer Al/Nb systems
Zhurnal Tekhnicheskoi Fiziki, 90:11 (2020), 1854–1859
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Formation of ohmic contacts to a diamond-like carbon layer deposited on a dielectric diamond substrate
Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 865–867
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Modification of the ratio between $sp^2/sp^3$-hybridized carbon components in PECVD diamond-like films
Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 855–858
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Plasma-chemical deposition of diamond-like films onto the surface of heavily doped single-crystal diamond
Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1229–1232
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Study of the structural and morphological properties of HPHT diamond substrates
Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1321–1325
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Influence of the channel–gate barrier height on the detection properties of a field-effect transistor in the microwave and terahertz ranges
Zhurnal Tekhnicheskoi Fiziki, 87:5 (2017), 746–753
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Low-temperature deposition of SiN$_ x$ films in SiH$_{4}$/Ar + N$_{2}$ inductively coupled plasma under high silane dilution with argon
Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1503–1506
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