Kraev Stanislav Alekseevich

Publications in Math-Net.Ru

1. Исследование спектров электролюминесценции в гетероструктурах с квантовыми ямами на основе твердых растворов HgCdTe при латеральной токовой накачке
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 52:5 (2026),  9–13
2. Schottky diodes based on monocrystalline Al/AlGaN/GaN heterostructures for zero-bias microwave detection
   
   Zhurnal Tekhnicheskoi Fiziki, 95:6 (2025),  1148–1156
3. CVD diamond structures with a $p$–$n$ junction – diodes and transistors
   
   Zhurnal Tekhnicheskoi Fiziki, 95:3 (2025),  540–548
4. Study of photo and electroluminescence of nitrogen-related color centers in a diamond $p$–$i$–$n$ diode
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:10 (2025),  48–51
5. Electroluminescence of germanium-vacancy color centers in a diamond $p$–$i$–$n$ diode
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:8 (2025),  3–6
6. Non-annealed ohmic contacts with reduced resistance to $p$- and $n$-type epitaxial layers of diamond and their thermal stability
   
   Fizika i Tekhnika Poluprovodnikov, 58:8 (2024),  409–414
7. Electrophysical properties of multilayer DLC films with different $sp^3$-phase contents
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:17 (2024),  30–33
8. Thermal annealing of multilayer films of diamond-like carbon with a variable content of $sp^3$-phase
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:13 (2024),  12–15
9. Plasma chemical deposition of hydrogenated DLC films with different hydrogen and $sp^3$-hybrid carbon content
   
   Fizika i Tekhnika Poluprovodnikov, 57:5 (2023),  309–312
10. Planar (lateral) light-emitting diodes with Ge(Si) nanoislands embedded in a photonic crystal
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:22 (2023),  12–15
11. Surface treatment of gallium arsenide after etching in C$_2$F$_5$Cl-plasma
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:19 (2023),  39–42
12. Influence of chloropentafluoroethane inductively coupled plasma parameters on the rate and characteristics of gallium arsenide etching
    
    Fizika i Tekhnika Poluprovodnikov, 56:7 (2022),  685–688
13. Effect of thermal annealing on the transport properties of Ti/AlGaN/GaN low-barrier Mott diodes
    
    Fizika i Tekhnika Poluprovodnikov, 56:7 (2022),  627–629
14. Effect of the chloropentafluoroethane additive in chlorine-containing plasma on the etching rate and etching-profile characteristics of gallium arsenide
    
    Fizika i Tekhnika Poluprovodnikov, 55:10 (2021),  837–840
15. Study of undoped nanocrystalline diamond films grown by microwave plasma-assisted chemical vapor deposition
    
    Fizika i Tekhnika Poluprovodnikov, 55:1 (2021),  49–58
16. Features of the vapor-phase epitaxy of GaAs on nonplanar substrates
    
    Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  958–961
17. Formation of ohmic contacts to a diamond-like carbon layer deposited on a dielectric diamond substrate
    
    Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  865–867
18. Modification of the ratio between $sp^2/sp^3$-hybridized carbon components in PECVD diamond-like films
    
    Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  855–858
19. The use of pulsed laser annealing to form ohmic Mo/Ti contacts to diamond
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:11 (2020),  34–38
20. Formation of low-resistivity Au/Mo/Ti ohmic contacts to $p$-diamond epitaxial layers
    
    Zhurnal Tekhnicheskoi Fiziki, 89:12 (2019),  1923–1932
21. Ohmic contacts to CVD diamond with boron-doped $\delta$ layers
    
    Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1386–1390
22. Vertical field-effect transistor with control $p$–$n$-junction based on GaAs
    
    Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1311–1314
23. Plasma-chemical deposition of diamond-like films onto the surface of heavily doped single-crystal diamond
    
    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1229–1232
24. A new approach to tof-sims analysis of the phase composition of carbon-containing materials
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:2 (2019),  50–54
25. Plasma chemical etching of gallium arsenide in C$_{2}$F$_{5}$Cl-based inductively coupled plasma
    
    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1362–1365
26. Low-temperature deposition of SiN$_ x$ films in SiH$_{4}$/Ar + N$_{2}$ inductively coupled plasma under high silane dilution with argon
    
    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1503–1506
27. Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source
    
    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1459–1462