Lobaev Mikhail Aleksandrovich

Publications in Math-Net.Ru

1. CVD diamond structures with a $p$–$n$ junction – diodes and transistors
   
   Zhurnal Tekhnicheskoi Fiziki, 95:3 (2025),  540–548
2. Study of photo and electroluminescence of nitrogen-related color centers in a diamond $p$–$i$–$n$ diode
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:10 (2025),  48–51
3. Electroluminescence of germanium-vacancy color centers in a diamond $p$–$i$–$n$ diode
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:8 (2025),  3–6
4. Non-annealed ohmic contacts with reduced resistance to $p$- and $n$-type epitaxial layers of diamond and their thermal stability
   
   Fizika i Tekhnika Poluprovodnikov, 58:8 (2024),  409–414
5. Crossover between Mott’s and Arrhenius’ laws in the temperature dependence of resistivity of highly boron-doped delta-layers in artificial diamond
   
   Fizika i Tekhnika Poluprovodnikov, 57:4 (2023),  259–264
6. Investigation of boron-doped delta layers in CVD diamond grown on single-sector HPHT substrates
   
   Nanosystems: Physics, Chemistry, Mathematics, 13:5 (2022),  578–584
7. Study of undoped nanocrystalline diamond films grown by microwave plasma-assisted chemical vapor deposition
   
   Fizika i Tekhnika Poluprovodnikov, 55:1 (2021),  49–58
8. Formation of multilayered nanostructures of NV sites in single-crystal CVD diamond
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:13 (2020),  19–23
9. The use of pulsed laser annealing to form ohmic Mo/Ti contacts to diamond
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:11 (2020),  34–38
10. Formation of low-resistivity Au/Mo/Ti ohmic contacts to $p$-diamond epitaxial layers
    
    Zhurnal Tekhnicheskoi Fiziki, 89:12 (2019),  1923–1932
11. Ohmic contacts to CVD diamond with boron-doped $\delta$ layers
    
    Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1386–1390
12. Creation of localized NV center ensembles in CVD diamond by electron beam irradiation
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:6 (2019),  36–39
13. Contraction of microwave discharge in the reactor for chemical vapor deposition of diamond
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:3 (2019),  30–33
14. A new approach to tof-sims analysis of the phase composition of carbon-containing materials
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:2 (2019),  50–54
15. New cluster secondary ions for quantitative analysis of the concentration of boron atoms in diamond by time-of-flight secondary-ion mass spectrometry
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:7 (2018),  52–60
16. Erratum to: “Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron”
    
    Fizika i Tekhnika Poluprovodnikov, 51:8 (2017),  1151
17. A CVD diamond-based photodetector for the visible and near-IR spectral range
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:24 (2017),  65–71
18. Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron
    
    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1595–1598