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Radishev Dmitrii Borisovich

Publications in Math-Net.Ru

  1. CVD diamond structures with a $p$$n$ junction – diodes and transistors

    Zhurnal Tekhnicheskoi Fiziki, 95:3 (2025),  540–548
  2. Study of photo and electroluminescence of nitrogen-related color centers in a diamond $p$$i$$n$ diode

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:10 (2025),  48–51
  3. Electroluminescence of germanium-vacancy color centers in a diamond $p$$i$$n$ diode

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:8 (2025),  3–6
  4. Thermal annealing of multilayer films of diamond-like carbon with a variable content of $sp^3$-phase

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:13 (2024),  12–15
  5. Plasma chemical deposition of hydrogenated DLC films with different hydrogen and $sp^3$-hybrid carbon content

    Fizika i Tekhnika Poluprovodnikov, 57:5 (2023),  309–312
  6. Crossover between Mott’s and Arrhenius’ laws in the temperature dependence of resistivity of highly boron-doped delta-layers in artificial diamond

    Fizika i Tekhnika Poluprovodnikov, 57:4 (2023),  259–264
  7. Investigation of boron-doped delta layers in CVD diamond grown on single-sector HPHT substrates

    Nanosystems: Physics, Chemistry, Mathematics, 13:5 (2022),  578–584
  8. Study of undoped nanocrystalline diamond films grown by microwave plasma-assisted chemical vapor deposition

    Fizika i Tekhnika Poluprovodnikov, 55:1 (2021),  49–58
  9. Modification of the ratio between $sp^2/sp^3$-hybridized carbon components in PECVD diamond-like films

    Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  855–858
  10. Formation of multilayered nanostructures of NV sites in single-crystal CVD diamond

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:13 (2020),  19–23
  11. The use of pulsed laser annealing to form ohmic Mo/Ti contacts to diamond

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:11 (2020),  34–38
  12. Formation of low-resistivity Au/Mo/Ti ohmic contacts to $p$-diamond epitaxial layers

    Zhurnal Tekhnicheskoi Fiziki, 89:12 (2019),  1923–1932
  13. Ohmic contacts to CVD diamond with boron-doped $\delta$ layers

    Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1386–1390
  14. Creation of localized NV center ensembles in CVD diamond by electron beam irradiation

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:6 (2019),  36–39
  15. Contraction of microwave discharge in the reactor for chemical vapor deposition of diamond

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:3 (2019),  30–33
  16. Study of the structural and morphological properties of HPHT diamond substrates

    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1321–1325
  17. Erratum to: “Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron”

    Fizika i Tekhnika Poluprovodnikov, 51:8 (2017),  1151
  18. A CVD diamond-based photodetector for the visible and near-IR spectral range

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:24 (2017),  65–71
  19. Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron

    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1595–1598
  20. Single-crystal GaN/AlN layers on CVD diamond

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:19 (2015),  73–80
  21. Characterization of single-crystal diamond grown from the vapor phase on substrates of natural diamond

    Fizika i Tekhnika Poluprovodnikov, 45:3 (2011),  403–407


© Steklov Math. Inst. of RAS, 2026