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Bogdanov Sergei Aleksandrovich

Publications in Math-Net.Ru

  1. CVD diamond structures with a $p$$n$ junction – diodes and transistors

    Zhurnal Tekhnicheskoi Fiziki, 95:3 (2025),  540–548
  2. Study of photo and electroluminescence of nitrogen-related color centers in a diamond $p$$i$$n$ diode

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:10 (2025),  48–51
  3. Electroluminescence of germanium-vacancy color centers in a diamond $p$$i$$n$ diode

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:8 (2025),  3–6
  4. Non-annealed ohmic contacts with reduced resistance to $p$- and $n$-type epitaxial layers of diamond and their thermal stability

    Fizika i Tekhnika Poluprovodnikov, 58:8 (2024),  409–414
  5. Crossover between Mott’s and Arrhenius’ laws in the temperature dependence of resistivity of highly boron-doped delta-layers in artificial diamond

    Fizika i Tekhnika Poluprovodnikov, 57:4 (2023),  259–264
  6. Investigation of boron-doped delta layers in CVD diamond grown on single-sector HPHT substrates

    Nanosystems: Physics, Chemistry, Mathematics, 13:5 (2022),  578–584
  7. Investigation of the effect of hydrogen content on the conductivity of nanocrystalline diamond films

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:2 (2022),  37–40
  8. Study of undoped nanocrystalline diamond films grown by microwave plasma-assisted chemical vapor deposition

    Fizika i Tekhnika Poluprovodnikov, 55:1 (2021),  49–58
  9. Formation of multilayered nanostructures of NV sites in single-crystal CVD diamond

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:13 (2020),  19–23
  10. The use of pulsed laser annealing to form ohmic Mo/Ti contacts to diamond

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:11 (2020),  34–38
  11. Formation of low-resistivity Au/Mo/Ti ohmic contacts to $p$-diamond epitaxial layers

    Zhurnal Tekhnicheskoi Fiziki, 89:12 (2019),  1923–1932
  12. Ohmic contacts to CVD diamond with boron-doped $\delta$ layers

    Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1386–1390
  13. Creation of localized NV center ensembles in CVD diamond by electron beam irradiation

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:6 (2019),  36–39
  14. Contraction of microwave discharge in the reactor for chemical vapor deposition of diamond

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:3 (2019),  30–33
  15. Erratum to: “Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron”

    Fizika i Tekhnika Poluprovodnikov, 51:8 (2017),  1151
  16. A CVD diamond-based photodetector for the visible and near-IR spectral range

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:24 (2017),  65–71
  17. Formation of singular (001) terraces on the surface of single-crystal HPHT diamond substrates

    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1647–1651
  18. Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron

    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1595–1598
  19. Single-crystal GaN/AlN layers on CVD diamond

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:19 (2015),  73–80


© Steklov Math. Inst. of RAS, 2026