Kotlyar Konstantin Pavlovich

Publications in Math-Net.Ru

1. GaN microrods growth by combined PA-MBE/HVPE method
   
   Fizika Tverdogo Tela, 67:6 (2025),  934–939
2. Growth of atomically smooth AlN layers on Si(111) substrates through an amorphous Si$_x$N$_y$ layer by plasma-assisted molecular beam epitaxy
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:14 (2025),  39–43
3. Low-temperature growth of InAs nanowires and nanosheets on Si(100) substrates
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:7 (2024),  27–30
4. Architectonics of zinc oxide nanorod coatings for adsorption gas sensors
   
   Zhurnal Tekhnicheskoi Fiziki, 93:10 (2023),  1494–1502
5. Effect of nitrogen plasma treatment on the structural and optical properties of InGaN
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:5 (2023),  32–35
6. Formation of InGaAs quantum dots in the body of AlGaAs nanowires via molecular-beam epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 56:7 (2022),  689–692
7. Self-organization of the composition of Al$_{x}$Ga$_{1-x}$N films grown on hybrid SiC/Si substrates
   
   Fizika Tverdogo Tela, 63:3 (2021),  363–369
8. Specific features of structural stresses in InGaN/GaN nanowires
   
   Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  785–788
9. Formation of hexagonal germanium on AlGaAs nanowire surfaces by molecular-beam epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 55:8 (2021),  621–624
10. MBE growth of InGaN nanowires on SiC/Si(111) and Si(111) substrates
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:21 (2021),  32–35
11. Directional radiation from GaAs quantum dots in AlGaAs nanowires
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:8 (2021),  47–50
12. Nonlinear bleaching of InAs nanowires in the visible range
    
    Optics and Spectroscopy, 128:1 (2020),  128–133
13. Synthesis of morphologically developed ingan nanostructures on silicon: influence of the substrate temperature on the morphological and optical properties
    
    Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  884–887
14. Selective-area growth of GaN nanowires on patterned SiO$_{x}$/Si substrates by molecular beam epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:21 (2020),  32–35
15. Studying evolution of the ensemble of micropores in a SiC/Si structure during its growth by the method of atom substitution
    
    Fizika Tverdogo Tela, 61:3 (2019),  433–440
16. Synthesis by molecular beam epitaxy and properties of InGaN nanostructures of branched morphology on a silicon substrate
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:21 (2019),  48–50
17. Solar cell based on core/shell nanowires
    
    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1464–1468
18. MBE growth and structural properties of GaP and InP nanowires on a SiC substrate with a graphene layer
    
    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1317–1320
19. Phosphorus-based nanowires grown by molecular-beam epitaxy on silicon
    
    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1304–1307
20. MBE growth and structural properties of InAs and InGaAs nanowires with different mole fraction of In on Si and strongly mismatched SiC/Si(111) substrates
    
    Fizika i Tekhnika Poluprovodnikov, 52:5 (2018),  522
21. The features of GaAs nanowire SEM images
    
    Fizika i Tekhnika Poluprovodnikov, 52:5 (2018),  510
22. Oxygen nitrogen mixture effect on aluminum nitride synthesis by reactive ion plasma deposition
    
    Fizika i Tekhnika Poluprovodnikov, 52:2 (2018),  196–200
23. MBE growth of ultrathin III–V nanowires on a highly mismatched SiC/Si(111) substrate
    
    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1525–1529
24. Fabrication of the structures with autocatalytic CdTe nanowires using magnetron sputtering deposition
    
    Fizika Tverdogo Tela, 58:12 (2016),  2314–2318
25. Growth and optical properties of filamentary GaN nanocrystals grown on a hybrid SiC/Si(111) substrate by molecular beam epitaxy
    
    Fizika Tverdogo Tela, 58:10 (2016),  1886–1889