Osipova Elena Vladimirovna

Publications in Math-Net.Ru

1. Mechanism of growth of Ga$_2$O$_3$ epitaxial layers by hydride vapour-phase epitaxy on SiC/Si (110) substrate
   
   Fizika Tverdogo Tela, 67:1 (2025),  105–113
2. The effect of tin on the properties of gallium nitride grown by hydride vapor-phase epitaxy
   
   Fizika Tverdogo Tela, 66:8 (2024),  1338–1343
3. Phase transformations in gallium oxide layers
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:17 (2023),  6–9
4. Study of silicon-to-silicon carbide transformation stages in the process of atomic substitution by the methods of total external X-ray reflection and X-ray diffractometry
   
   Fizika Tverdogo Tela, 64:3 (2022),  326–336
5. Spintronic properties of the interface between Si(111) and 3$C$-SiC(111) grown by the method of coordinated substitution of atoms
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:20 (2022),  43–46
6. Self-organization of the composition of Al$_{x}$Ga$_{1-x}$N films grown on hybrid SiC/Si substrates
   
   Fizika Tverdogo Tela, 63:3 (2021),  363–369
7. An analysis of the hydrogen embrittlement resistance of aluminum alloys
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:4 (2021),  15–18
8. The effect of hydrogen on fluctuation embrittlement of aluminum
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:17 (2019),  31–34
9. Study of the anisotropic elastoplastic properties of $\beta$-Ga$_{2}$O$_{3}$ films synthesized on SiC/Si substrates
   
   Fizika Tverdogo Tela, 60:5 (2018),  851–856
10. Epitaxial gallium oxide on a SiC/Si substrate
    
    Fizika Tverdogo Tela, 58:9 (2016),  1812–1817