Moiseev Konstantin Dmitrievich

Publications in Math-Net.Ru

1. Geometry of InSb quantum dots grown on a surface of the In(As, Sb) matrix layer
   
   Fizika Tverdogo Tela, 67:8 (2025),  1426–1431
2. Conductivity of nanocontact to A$^{\mathrm{III}}$As- and A$^{\mathrm{III}}$Sb semiconductors with a native oxide layer
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:11 (2024),  42–46
3. Features of the energy band structure of the InAsSbP epilayer deposited on a surface of the InAs$_{1-y}$Sb$_y$ solid solution
   
   Fizika Tverdogo Tela, 65:10 (2023),  1707–1714
4. Radiative recombination in the InAs/InSb type II broken-gap heterojucntion with quantum dots at the interface
   
   Fizika Tverdogo Tela, 65:4 (2023),  645–651
5. Stimulated emission in the InAs/InAsSb/InAsSbP heterostructures with asymmetric electronic confinement
   
   Fizika i Tekhnika Poluprovodnikov, 56:9 (2022),  876–881
6. Band diagram of the InAs$_{1-y}$Sb$_{y}$/InAsSbP heterojunction in the composition range $y<$ 0.2
   
   Fizika Tverdogo Tela, 63:4 (2021),  475–482
7. Suppression of wavelength temperature dependence in heterostructures with staggered type II heterojunction InAsSb/InAsSbP
   
   Fizika i Tekhnika Poluprovodnikov, 55:3 (2021),  277–281
8. Forming a type-II heterojunction in the InAsSb/InAsSbP semiconductor structure
   
   Fizika Tverdogo Tela, 62:11 (2020),  1822–1827
9. Long-wavelength leds in the atmospheric transparency window of 4.6 – 5.3 $\mu$m
   
   Fizika i Tekhnika Poluprovodnikov, 54:2 (2020),  202–206
10. InAs$_{1-y}$Sb$_{y}$/InAsSbP narrow-gap heterostructures ($y$ = 0.09–0.16) grown by metalorganic vapor phase epitaxy for the spectral range of 4–6 $\mu$m
    
    Fizika Tverdogo Tela, 61:10 (2019),  1746–1753
11. Discovery of III–V semiconductors: physical properties and application
    
    Fizika i Tekhnika Poluprovodnikov, 53:3 (2019),  291–308
12. Effects of magnetic ordering in conductivity and magnetization of gaas-based semiconductor heterostructures upon changing the concentration of the delta-layer of manganese admixture
    
    Fizika Tverdogo Tela, 60:12 (2018),  2325–2330
13. Rearrangement of electroluminescence spectra in type-II $n$-InAs/$n$-InAsSbP heterostructures
    
    Fizika Tverdogo Tela, 60:3 (2018),  585–590
14. On the delta-type doping of GaAs-based heterostructures with manganese compounds
    
    Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1189–1195
15. InSb quantum dots produced by liquid-phase epitaxy on InGaAsSb/GaSb substrates
    
    Fizika i Tekhnika Poluprovodnikov, 51:8 (2017),  1146–1150
16. Features of an InAsSbP epilayer formation on an InAs support by metalorganic vapor phase epitaxy
    
    Fizika Tverdogo Tela, 58:11 (2016),  2203–2207
17. Charge transfer features and ferromagnetic order in semiconductor heterostructures $\delta$-doped with manganese
    
    Fizika Tverdogo Tela, 58:11 (2016),  2160–2163
18. Quantum dots grown in the InSb/GaSb system by liquid-phase epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 50:7 (2016),  993–996
19. Effect of multicomponent InAsSbP matrix surface on formation of InSb quantum dots at MOVPE growth
    
    Fizika i Tekhnika Poluprovodnikov, 50:7 (2016),  927–931
20. High-temperature interfacial electroluminescence in type-II broken-gap heterostructures based on InSb quantum dashes in $n$-InAs matrix
    
    Fizika i Tekhnika Poluprovodnikov, 48:7 (2014),  938–943
21. On InAsSbP epitaxial layers with ultimate phosphorus content, lattice-matched with an InAs substrate
    
    Fizika i Tekhnika Poluprovodnikov, 48:6 (2014),  753–758
22. Specific features of electroluminescence in heterostructures with InSb quantum dots in an InAs matrix
    
    Fizika i Tekhnika Poluprovodnikov, 47:11 (2013),  1536–1541
23. Specific features of nanosize object formation in an InSb/InAs system by metal-organic vapor-phase epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 47:3 (2013),  420–425
24. Two-color luminescence from a single type-II InAsSbP/InAs heterostructure
    
    Fizika i Tekhnika Poluprovodnikov, 47:1 (2013),  30–35
25. Interfacial luminescence in an InAs/InAsSbP isotype type II heterojunction at room temperature
    
    Fizika i Tekhnika Poluprovodnikov, 45:10 (2011),  1386–1391
26. Features of obtaining diluted magnetic semiconductors in the system of narrow-gap GaInAsSb alloys
    
    Fizika i Tekhnika Poluprovodnikov, 45:6 (2011),  788–793
27. Photovoltaic detector based on type II heterostructure with deep AlSb/InAsSb/AlSb quantum well in the active region for the midinfrared spectral range
    
    Fizika i Tekhnika Poluprovodnikov, 45:2 (2011),  251–255
28. Electroluminescence in $p$-InAs/AlSb/InAsSb/AlSb/$p(n)$-GaSb type II heterostructures with deep quantum wells at the interface
    
    Fizika i Tekhnika Poluprovodnikov, 44:1 (2010),  69–74