Zakgeim Dmitrii Aleksandrovich

Publications in Math-Net.Ru

1. Study of charge carrier traps in bulk crystal gallium oxide $\beta$-Ga$_{2}$O$_{3}$
   
   Fizika Tverdogo Tela, 63:4 (2021),  421–426
2. Elemental and structural mapping of Czochralski-grown bulk (Al$_{x}$Ga$_{1-x}$)$_{2}$O$_{3}$, crystals
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:5 (2021),  19–22
3. Volume gallium oxide crystals grown from melt by the Czochralski method in an oxygen-containing atmosphere
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:22 (2020),  43–45
4. Insulating GaN epilayers co-doped with iron and carbon
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019),  36–39
5. The effect of the method by which a high-resistivity GaN buffer layer is formed on properties of InAlN/GaN and AlGaN/GaN heterostructures with 2D electron gas
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:13 (2018),  51–58
6. Technique for forming ITO films with a controlled refractive index
   
   Fizika i Tekhnika Poluprovodnikov, 50:7 (2016),  1001–1006
7. Calculation of the optimal architecture of a double-layer ITO film intended for use in reflective contacts in blue and near-UV LEDs
   
   Fizika i Tekhnika Poluprovodnikov, 49:7 (2015),  994–998
8. Use of double-layer ITO films in reflective contacts for blue and near-UV LEDs
   
   Fizika i Tekhnika Poluprovodnikov, 48:12 (2014),  1713–1718
9. High-power AlGaInN LED chips with two-level metallization
   
   Fizika i Tekhnika Poluprovodnikov, 48:9 (2014),  1287–1293
10. Raising the quantum efficiency of AlGaInN flip-chip LEDs by Reactive ion etching of the outer side of SiC substrates
    
    Fizika i Tekhnika Poluprovodnikov, 44:5 (2010),  684–687