Sharofidinov Shukrillo Shamsidinovich

Publications in Math-Net.Ru

1. Полуполярный нитрид алюминия: эпитаксия объемного материала на наноструктурированной кремниевой подложке
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 52:4 (2026),  25–28
2. GaN microrods growth by combined PA-MBE/HVPE method
   
   Fizika Tverdogo Tela, 67:6 (2025),  934–939
3. Mechanism of growth of Ga$_2$O$_3$ epitaxial layers by hydride vapour-phase epitaxy on SiC/Si (110) substrate
   
   Fizika Tverdogo Tela, 67:1 (2025),  105–113
4. The investigation of the impact of nano-structured AlN/Si(100) templates for the growth of semipolar AlN$(10\bar11)$ layers
   
   Fizika i Tekhnika Poluprovodnikov, 59:1 (2025),  3–7
5. The epitaxy of AlN$(11\bar{2}2)$ layers on GaN$(11\bar{2}2)$/$m$-Al$_2$О$_3$ template by hydride vapour-phase epitaxy
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:16 (2025),  42–44
6. The effect of tin on the properties of gallium nitride grown by hydride vapor-phase epitaxy
   
   Fizika Tverdogo Tela, 66:8 (2024),  1338–1343
7. HVPE epitaxy of semipolar AlN(10$\bar{1}$1) layers on the AlN/Si(100) template
   
   Fizika i Tekhnika Poluprovodnikov, 58:9 (2024),  474–477
8. Investigation of the Cr$^{3+}$ impurity luminescence in proton-irradiated $\beta$-Ga$_2$O$_3$
   
   Fizika i Tekhnika Poluprovodnikov, 57:7 (2023),  573–576
9. Studies of structural and mechanical properties of AlGaN thin films on nano-SiC/Si hybrid substrates
   
   Fizika i Tekhnika Poluprovodnikov, 57:7 (2023),  534–537
10. Phase transformations in gallium oxide layers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:17 (2023),  6–9
11. Growth of SiC, AlN, and GaN films on silicon parts of arbitrary geometry for microelectromechanical applications
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:11 (2023),  3–6
12. Structure and properties of composites based on aluminum and gallium nitrides grown on silicon of different orientations with a buffer layer of silicon carbide
    
    Fizika Tverdogo Tela, 64:5 (2022),  522–527
13. Growth regimes of aluminium nitride films on hybrid SiC/Si(111) substrates
    
    Fizika Tverdogo Tela, 64:1 (2022),  117–124
14. Growth of thin-film AlGaN/GaN epitaxial heterostructures on hybrid substrates containing layers of silicon carbide and porous silicon
    
    Fizika i Tekhnika Poluprovodnikov, 56:6 (2022),  547–552
15. Peculiarities of nucleation and growth of InGaN nanowires on SiC/Si substrates by HVPE
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:4 (2022),  24–28
16. Misfit stress relaxation in $\alpha$-Ga$_{2}$O$_{3}$/$\alpha$-Al$_{2}$O$_{3}$ heterostructures via formation of misfit dislocations
    
    Fizika Tverdogo Tela, 63:6 (2021),  788–795
17. Self-organization of the composition of Al$_{x}$Ga$_{1-x}$N films grown on hybrid SiC/Si substrates
    
    Fizika Tverdogo Tela, 63:3 (2021),  363–369
18. Effect of pretreatment of the silicon substrate on the properties of GaN films grown by chloride–hydride vapor-phase epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 55:8 (2021),  704–710
19. Dielectric and pyroelectric properties of composites based on aluminum and gallium nitrides grown by chloride-hydride epitaxy on a silicon carbide-on-silicon substrate
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:9 (2021),  7–10
20. Biplanar epitaxial AlN/SiC/$(n,p)$SiC structures for high-temperature functional electronic devices
    
    Zhurnal Tekhnicheskoi Fiziki, 90:3 (2020),  450–455
21. Epitaxial growth of bulk semipolar aln films on Si(001) and hybrid SiC/Si(001) substrates
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:11 (2020),  22–25
22. Specific features of the pyroelectric effect in epitaxial aluminum nitride layers obtained on Si substrates
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:1 (2020),  20–23
23. Influence of orientation of a silicon substrate with a buffer silicon carbide layer on dielectric and polar properties of aluminum nitride films
    
    Fizika Tverdogo Tela, 61:12 (2019),  2379–2384
24. A new method of growing AlN, GaN, and AlGaN bulk crystals using hybrid SiC/Si substrates
    
    Fizika Tverdogo Tela, 61:12 (2019),  2338–2343
25. Method for controlling the polarity of gallium nitride layers in epitaxial synthesis of GaN/AlN heterostructures on hybrid SiC/Si substrates
    
    Fizika Tverdogo Tela, 61:12 (2019),  2289–2293
26. Growing III–V semiconductor heterostructures on SiC/Si substrates
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019),  24–27
27. Studying the pyroelectric effect in AlN epilayers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:16 (2018),  11–19
28. Chloride epitaxy of $\beta$-Ga$_{2}$O$_{3}$ layers grown on $c$-sapphire substrates
    
    Fizika i Tekhnika Poluprovodnikov, 50:7 (2016),  997–1000
29. On a reduction in cracking upon the growth of AlN on Si substrates by hydride vapor-phase epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 50:4 (2016),  549–552
30. Epitaxy of gallium nitride in semi-polar direction on Si(210) substrate
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:6 (2013),  1–8
31. Epitaxy of gallium nitride in semi-polar direction on silicon
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:1 (2012),  21–26
32. Aluminum nitride on silicon: Role of silicon carbide interlayer and chloride vapor-phase epitaxy technology
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:11 (2010),  17–23