Nezhdanov Aleksei Vladimirovich

Publications in Math-Net.Ru

1. Refractive index dispersion and Raman scattering spectra of a germanium single crystal enriched with $^{70}$Ge isotope
   
   Optics and Spectroscopy, 133:7 (2025),  734–740
2. Optimization of carrier-depletion silicon optical phase shifter
   
   Fizika i Tekhnika Poluprovodnikov, 59:1 (2025),  16–22
3. Study of the low-order mode field structure impact on $Y$-splitter parameters in photonic integrated circuits
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:19 (2025),  19–22
4. Formation of ferromagnetic semiconductor GaMnAs by ion implantation: comparison of different types of annealing
   
   Fizika Tverdogo Tela, 66:10 (2024),  1686–1698
5. Effect of atomic mass and isotopic disorder on the phonon spectra of isotope-enriched germanium crystals
   
   Fizika Tverdogo Tela, 66:8 (2024),  1425–1430
6. The effect of an electric field on the graphene hydrogenation rate in inductively coupled plasma
   
   Zhurnal Tekhnicheskoi Fiziki, 94:7 (2024),  1002–1007
7. Metamorphic InGaAs photodiode with wavelength 1.55 $\mu$m, grown on GaAs substrate
   
   Fizika i Tekhnika Poluprovodnikov, 58:12 (2024),  709–713
8. Ferromagnetic GaMnAs layers obtained by implantation of manganese ions followed by pulsed laser annealing
   
   Fizika Tverdogo Tela, 65:12 (2023),  2230–2238
9. Creation of GaMnAs ferromagnetic semiconductor by combined laser method
   
   Fizika Tverdogo Tela, 65:5 (2023),  754–761
10. Formation of vertical graphene on surface of the gallium-arsenide structures
    
    Fizika Tverdogo Tela, 65:4 (2023),  669–675
11. The study of the process of hydrogenation of single-walled carbon nanotubes using inductively coupled argon-hydrogen plasma
    
    Zhurnal Tekhnicheskoi Fiziki, 93:7 (2023),  884–891
12. MOCVD growth of InGaAs metamorphic heterostructures for photodiodes with low dark current
    
    Fizika i Tekhnika Poluprovodnikov, 57:6 (2023),  495–500
13. Fabrication and study of the properties of GaAs layers doped with bismuth
    
    Fizika i Tekhnika Poluprovodnikov, 57:6 (2023),  399–405
14. Scanning Kelvin Probe Microscopy investigation of optically induced charge in Au nanoparticles embedded into ZrO$_2$(Y) films
    
    Zhurnal Tekhnicheskoi Fiziki, 92:12 (2022),  1937–1942
15. Effect of substrate misorientation on the properties of $p$-HEMT GaAs-based nanoheterostructures formed during MOCVD epitaxy
    
    Zhurnal Tekhnicheskoi Fiziki, 92:10 (2022),  1582–1587
16. Photoluminescence of strained germanium microbridges at various temperatures: experiment and modeling
    
    Fizika i Tekhnika Poluprovodnikov, 56:10 (2022),  954–960
17. Design of tunnel-coupled quantum wells for a Mach–Zehnder scheme modulator construction
    
    Fizika i Tekhnika Poluprovodnikov, 56:9 (2022),  833–838
18. Pulsed laser irradiation of light-emitting structures with a (Ga,Mn)As layer
    
    Fizika Tverdogo Tela, 63:9 (2021),  1245–1252
19. Action of excimer laser pulses on light-emitting InGaAs/GaAs structures with a (Ga,Mn)As-layer
    
    Fizika Tverdogo Tela, 63:3 (2021),  346–355
20. Method for forming films of the $\beta$-FeSi$_2$ phase by pulsed laser deposition in vacuum
    
    Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  773–778
21. Doping of carbon layers grown by the pulsed laser technique
    
    Fizika i Tekhnika Poluprovodnikov, 55:8 (2021),  637–643
22. Pulsed laser irradiation of GaAs-based light-emitting structures
    
    Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1336–1343
23. Formation of carbon layers by the thermal decomposition of carbon tetrachloride in a reactor for MOCVD epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 54:8 (2020),  801–806
24. Ge/Si core/shell quantum dots in an alumina matrix: influence of the annealing temperature on the optical properties
    
    Fizika i Tekhnika Poluprovodnikov, 54:2 (2020),  129–137
25. Locally strained Ge/SOI structures with improved heat sink as an active media for silicon optoelectronics
    
    Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1360–1365
26. On the combined application of raman spectroscopy and photoluminescence spectroscopy for the diagnostics of multilayer heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1233–1236
27. Study of CsPbBr$_{3}$ nanocrystals and their agglomerates by combined scanning probe microscopy and optical spectrometry
    
    Optics and Spectroscopy, 125:6 (2018),  752–757
28. Structural modification of pecvd As$_{50}$S$_{50}$ chalcogenide-glass films by femtosecond laser radiation
    
    Optics and Spectroscopy, 124:5 (2018),  706–712
29. Formation and properties of locally tensile strained Ge microstructures for silicon photonics
    
    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1331–1336
30. Modification of the properties of ferromagnetic layers based on A$^{3}$B$^{5}$ compounds by pulsed laser annealing
    
    Fizika Tverdogo Tela, 59:11 (2017),  2130–2134
31. Influence of the deposition and annealing temperatures on the luminescence of germanium nanocrystals formed in GeO$_{x}$ films and multilayer Ge/SiO$_{2}$ structures
    
    Fizika Tverdogo Tela, 59:5 (2017),  965–971
32. Cleaved-edge photoluminescence spectroscopy of multilayer heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1510–1513
33. Structure and optical properties of the silver/polyacrylonitrile nanocomposites
    
    Zhurnal Tekhnicheskoi Fiziki, 86:11 (2016),  80–85
34. Study of the structures of cleaved cross sections by Raman spectroscopy
    
    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1561–1564
35. Conditions of growth of high-quality relaxed Si$_{1-x}$Ge$_{x}$ layers with a high Ge content by the vapor-phase decomposition of monogermane on a sublimating Si hot wire
    
    Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1270–1275
36. Epitaxially grown monoisotopic Si, Ge, and Si$_{1-x}$Ge$_{x}$ alloy layers: production and some properties
    
    Fizika i Tekhnika Poluprovodnikov, 50:3 (2016),  350–353
37. Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride
    
    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  274–278
38. Raman spectroscopy of InGaAs/GaAs nanoheterostructures $\delta$-doped with Mn
    
    Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  102–106
39. Thermal evolution of the morphology, structure, and optical properties of multilayer nanoperiodic systems produced by the vacuum evaporation of SiO and SiO$_2$
    
    Fizika i Tekhnika Poluprovodnikov, 47:4 (2013),  460–465
40. Peculiarities of the formation and properties of light-emitting structures based on ion-synthesized silicon nanocrystals in SiO$_2$ and matrices
    
    Fizika Tverdogo Tela, 54:2 (2012),  347–359
41. Annealing-induced evolution of optical properties of the multilayered nanoperiodic SiO$_x$/ZrO$_2$ system containing Si nanoclusters
    
    Fizika i Tekhnika Poluprovodnikov, 45:6 (2011),  747–753
42. The morphology, electron structure, and optical properties of self-assembled silicon nanostructures on the surface of highly oriented pyrolytic graphite
    
    Fizika i Tekhnika Poluprovodnikov, 45:1 (2011),  57–61
43. Confocal Raman microscopy of self-assembled GeSi/Si(001) Islands
    
    Fizika i Tekhnika Poluprovodnikov, 44:11 (2010),  1552–1558