Goncharov Boris Vladimirovich

Publications in Math-Net.Ru

1. Production of ultra-thin superconducting films from NbN by cathode sputtering at substrate temperatures 20$^\circ$C–120$^\circ$C
   
   Zhurnal Tekhnicheskoi Fiziki, 95:10 (2025),  1924–1933
2. Switching of superconducting nanowires from NbN to the normal state and back at high frequency in two-layer structures due to local heating
   
   Zhurnal Tekhnicheskoi Fiziki, 95:9 (2025),  1690–1697
3. Magnetic field characterization of physical properties of two-dimensional electron gas of nitride high electron mobility transistor heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 59:2 (2025),  91–96
4. Effect of low doses of ion irradiation on the superconducting properties of thin NbN films
   
   Fizika Tverdogo Tela, 66:6 (2024),  859–864
5. Modeling of thermal processes in a multilayer logic nanoelement consisting of NbN nanowires located in various functional layers and separated by a layer of Al$_2$O$_3$ dielectric
   
   Fizika Tverdogo Tela, 65:7 (2023),  1211–1214
6. Influence of ion irradiation on the properties of thin superconducting NbN films
   
   Fizika Tverdogo Tela, 65:7 (2023),  1118–1122
7. Two-layer logic elements for classic cryogenic computers
   
   Fizika Tverdogo Tela, 64:10 (2022),  1390–1398
8. Simulation of temperature distribution in a functional NbN nanoelement with an embedded normal metal region
   
   Fizika Tverdogo Tela, 64:9 (2022),  1228–1231
9. Creating elements from NbN for logic devices of classic cryo-computers
   
   Fizika Tverdogo Tela, 63:9 (2021),  1241–1244
10. Creation of thin films of NbN at room temperature of the substrate
    
    Fizika Tverdogo Tela, 63:9 (2021),  1238–1240
11. Control of superconducting transitions in nanowires using galvanically uncoupled gates for designing superconductor-based electronic devices
    
    Fizika Tverdogo Tela, 62:9 (2020),  1420–1427
12. The influence of integrated resistors formed under ion irradiation on the superconducting transitions of niobium nitride nanoconductors
    
    Zhurnal Tekhnicheskoi Fiziki, 90:11 (2020),  1860–1863
13. Poly-para-xylylene-based memristors on flexible substrates
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:21 (2019),  40–43