Oganesyan Gagik Araratovich

Publications in Math-Net.Ru

1. Photoluminescence related to dislocations in silicon plastically deformed under bending mode of central symmetry
   
   Fizika Tverdogo Tela, 67:5 (2025),  810–816
2. Effect of proton irradiation on the properties of high-voltage integrated 4$H$-SiC Schottky diodes at operating temperatures
   
   Fizika i Tekhnika Poluprovodnikov, 57:1 (2023),  53–57
3. Boron-doped silicon: a possible way of testing and refining models of non-ionizing energy loss under electron- and proton irradiation
   
   Fizika Tverdogo Tela, 64:12 (2022),  1915
4. Influence of the crystallographic orientation of silicon on the formation of “primary” cracks
   
   Fizika Tverdogo Tela, 64:5 (2022),  560–563
5. Annealing of high voltage 4H-SiC Schottky diodes irradiated with electrons at high temperatures
   
   Fizika i Tekhnika Poluprovodnikov, 56:4 (2022),  441–445
6. Study of heavily doped $n$-$3\mathrm{C}$-$\mathrm{SiC}$, epitaxial films grown on $6H$-$\mathrm{SiC}$ semi-insulating substraes by sublimation method
   
   Fizika i Tekhnika Poluprovodnikov, 56:2 (2022),  225–228
7. “Nucleation” cracks on the surface of a silicon crystal
   
   Fizika Tverdogo Tela, 63:10 (2021),  1594–1597
8. Towards the modeling of impurity-related defects in irradiated $n$-type germanium: a challenge to theory
   
   Fizika i Tekhnika Poluprovodnikov, 54:11 (2020),  1188
9. Vacancy-phosphorus complexes in electron-irradiated floating-zone $n$-type silicon: new points in annealing studies
   
   Fizika i Tekhnika Poluprovodnikov, 54:1 (2020),  45
10. Interaction rates of group-III and group-V impurities with intrinsic point defects in irradiated Si and Ge
    
    Fizika i Tekhnika Poluprovodnikov, 52:13 (2018),  1578
11. Diversity of properties of device structures based on group-III nitrides, related to modification of the fractal-percolation system
    
    Fizika i Tekhnika Poluprovodnikov, 52:7 (2018),  804–811
12. Radiation-produced defects in germanium: experimental data and models of defects
    
    Fizika i Tekhnika Poluprovodnikov, 51:12 (2017),  1632–1646
13. Effects of irradiation with 8-MeV protons on $n$-3$C$-SiC heteroepitaxial layers
    
    Fizika i Tekhnika Poluprovodnikov, 51:8 (2017),  1088–1090
14. Some challenging points in the identification of defects in floating-zone $n$-type silicon irradiated with 8 and 15 Mev protons
    
    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1313–1319
15. Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:21 (2016),  39–46
16. The relationship between the reliability of transistors with 2D AlGaN/GaN channel and organization type of nanomaterial
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:13 (2016),  80–86
17. Electrical properties of diluted $n$- and $p$-Si$_{1-x}$Ge$_x$ at small $x$
    
    Fizika i Tekhnika Poluprovodnikov, 48:12 (2014),  1592–1596
18. Vacancy-donor pairs and their formation in irradiated $n$-Si
    
    Fizika i Tekhnika Poluprovodnikov, 48:11 (2014),  1473–1478
19. Similarities and distinctions of defect production by fast electron and proton irradiation: moderately doped silicon and silicon carbide of $n$-type
    
    Fizika i Tekhnika Poluprovodnikov, 46:4 (2012),  473–481
20. Conductivity compensation in $p$-6H-SiC in irradiation with 8-MeV protons
    
    Fizika i Tekhnika Poluprovodnikov, 45:9 (2011),  1188–1190
21. Reverse recovery of Si/Si$_{1-x}$Ge$_x$ heterodiodes fabricated by direct bonding
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:13 (2011),  83–89
22. Electrical characteristics of multigraphene films grown on high-resistivity silicon carbide substrates
    
    Fizika i Tekhnika Poluprovodnikov, 44:10 (2010),  1436–1438
23. Comparative study of changes in electrical properties of silicon and silicon carbide upon proton irradiation
    
    Fizika i Tekhnika Poluprovodnikov, 44:5 (2010),  706–712