Chucheva Galina Viktorovna

Publications in Math-Net.Ru

1. Reliability of MIS structures based on films of barium strontium titanate and hafnium oxide
   
   Fizika Tverdogo Tela, 67:10 (2025),  1928–1931
2. On the properties of the transition layer between the silicon substrate and the ferroelectric or high-k-dielectric insulating gap
   
   Fizika Tverdogo Tela, 67:5 (2025),  832–836
3. Influence of the upper electrode material on the electrophysical properties of MDM structures based on ferroelectric films
   
   Fizika Tverdogo Tela, 65:6 (2023),  1060–1064
4. Formation and study of metal-insulator-semiconductor structures based on hafnium oxide films
   
   Fizika Tverdogo Tela, 65:4 (2023),  572–576
5. Effect of dopant on piezoelectric and dielectric properties of thin films Bi$_{3.25}$La$_{0.75}$Ti$_{3-x}$A$_x$O$_{12}$ ($A$ – Мn, Zr, Nb)
   
   Fizika Tverdogo Tela, 64:10 (2022),  1483–1488
6. The effect of a strong static electric field and heating on characteristics of the high-frequency impedance of metal–ferroelectric–semiconductor structures
   
   Fizika Tverdogo Tela, 64:5 (2022),  556–559
7. Insulating potential shape created by ultrathin silicon oxide layers
   
   Fizika i Tekhnika Poluprovodnikov, 56:3 (2022),  328–334
8. The influence of the PZT buffer layer on electrophysical properties of MDM structures with the BST film
   
   Fizika Tverdogo Tela, 63:11 (2021),  1895–1900
9. A weak manifestation of the field effect in metal-dielectric-semiconductor structures with a ferroelectric insulating layer Ba$_{x}$Sr$_{1-x}$TiO$_{3}$
   
   Fizika Tverdogo Tela, 63:11 (2021),  1887–1889
10. Silicon ultrathin oxide (4.2 nm) – polysilicon structures resistant to field damages
    
    Fizika i Tekhnika Poluprovodnikov, 55:1 (2021),  24–27
11. Electrophysical properties investigation of Ba$_{0.8}$Sr$_{0.2}$TiO$_{3}$ ferroelectric films in paraelectric state
    
    Fizika Tverdogo Tela, 62:8 (2020),  1226–1231
12. Creation and investigation of metal–dielectric–semiconductor structures based on ferroelectric films
    
    Fizika Tverdogo Tela, 62:3 (2020),  422–426
13. Conductivity of metal–dielectric–semiconductor structures based on ferroelectric films
    
    Fizika Tverdogo Tela, 62:1 (2020),  121–124
14. Dependence of the electrophysical characteristics of metal–ferroelectric–semiconductor structures on the field-electrode material
    
    Fizika i Tekhnika Poluprovodnikov, 54:11 (2020),  1219–1223
15. The effect of synthesis temperature on the microstructure and electrophysical properties of BST 80/20 films
    
    Fizika Tverdogo Tela, 61:10 (2019),  1948–1952
16. Features of the characteristics of field-resistant silicon–ultrathin oxide–polysilicon structures
    
    Fizika i Tekhnika Poluprovodnikov, 53:4 (2019),  481–484
17. On the nature of the increase in the electron mobility in the inversion channel at the silicon–oxide interface after the field effect
    
    Fizika i Tekhnika Poluprovodnikov, 53:1 (2019),  89–92
18. Determination of the parameters of metal–insulator–semiconductor structures with ultrathin insulating layer from high-frequency capacitance–voltage measurements
    
    Fizika i Tekhnika Poluprovodnikov, 53:1 (2019),  46–49
19. The influence of the substrate material on the structure and electrophysical properties of Ba$_{x}$Sr$_{1-x}$TiO$_{3}$ thin films
    
    Fizika Tverdogo Tela, 60:5 (2018),  951–954
20. Generation of surface electron states with a silicon–ultrathin-oxide interface under the field-induced damage of metal–oxide–semiconductor structures
    
    Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1185–1188
21. Optical monitoring of the deposition process of ferroelectric films
    
    Fizika Tverdogo Tela, 57:7 (2015),  1354–1357
22. Growth kinetics of induced domains in Ba$_{0.8}$Sr$_{0.2}$TiO$_3$ ferroelectric thin films
    
    Fizika Tverdogo Tela, 57:6 (2015),  1134–1137
23. Features of high-frequency measurements of the impedance of metal-insulator-semiconductor structures with an ultrathin oxide
    
    Fizika i Tekhnika Poluprovodnikov, 49:4 (2015),  483–488
24. Calculation of thermal parameters and technology of formation MPL microwave range
    
    Izv. Sarat. Univ. Physics, 13:1 (2013),  9–12
25. Voltage-capacitance characteristics of MFS-structures based on ferroelectric films
    
    Izv. Sarat. Univ. Physics, 13:1 (2013),  7–9
26. Determining parameters of planar capacitors based of thin film ferroelectric materials
    
    Izv. Sarat. Univ. Physics, 12:2 (2012),  8–11
27. Manifestation of excess centers of electron-hole pair generation resulting from field and thermal stresses and their subsequent annihilation in dynamic current-voltage characteristics of Si-MOS structures with ultrathin oxide
    
    Fizika i Tekhnika Poluprovodnikov, 45:7 (2011),  974–979
28. Direct tunneling of electrons in Al–$n^+$-Si–SiO$_2$–$n$-Si structures under conditions of nonstationary depletion of the semiconductor surface of the majority charge carriers
    
    Fizika i Tekhnika Poluprovodnikov, 44:8 (2010),  1050–1052


29. Phase changes of multiferroic magnetic materials, used in external memory systems
    
    Izv. Sarat. Univ. Physics, 17:1 (2017),  33–43