Belorusov Dmitry Aleksandrovich

Publications in Math-Net.Ru

1. Reliability of MIS structures based on films of barium strontium titanate and hafnium oxide
   
   Fizika Tverdogo Tela, 67:10 (2025),  1928–1931
2. On the properties of the transition layer between the silicon substrate and the ferroelectric or high-k-dielectric insulating gap
   
   Fizika Tverdogo Tela, 67:5 (2025),  832–836
3. Influence of the upper electrode material on the electrophysical properties of MDM structures based on ferroelectric films
   
   Fizika Tverdogo Tela, 65:6 (2023),  1060–1064
4. Formation and study of metal-insulator-semiconductor structures based on hafnium oxide films
   
   Fizika Tverdogo Tela, 65:4 (2023),  572–576
5. The effect of a strong static electric field and heating on characteristics of the high-frequency impedance of metal–ferroelectric–semiconductor structures
   
   Fizika Tverdogo Tela, 64:5 (2022),  556–559
6. The influence of the PZT buffer layer on electrophysical properties of MDM structures with the BST film
   
   Fizika Tverdogo Tela, 63:11 (2021),  1895–1900
7. A weak manifestation of the field effect in metal-dielectric-semiconductor structures with a ferroelectric insulating layer Ba$_{x}$Sr$_{1-x}$TiO$_{3}$
   
   Fizika Tverdogo Tela, 63:11 (2021),  1887–1889
8. Silicon ultrathin oxide (4.2 nm) – polysilicon structures resistant to field damages
   
   Fizika i Tekhnika Poluprovodnikov, 55:1 (2021),  24–27
9. Dependence of the electrophysical characteristics of metal–ferroelectric–semiconductor structures on the field-electrode material
   
   Fizika i Tekhnika Poluprovodnikov, 54:11 (2020),  1219–1223