Goldman Evgenii Iosifovich

Publications in Math-Net.Ru

1. On the properties of the transition layer between the silicon substrate and the ferroelectric or high-k-dielectric insulating gap
   
   Fizika Tverdogo Tela, 67:5 (2025),  832–836
2. The effect of a strong static electric field and heating on characteristics of the high-frequency impedance of metal–ferroelectric–semiconductor structures
   
   Fizika Tverdogo Tela, 64:5 (2022),  556–559
3. Insulating potential shape created by ultrathin silicon oxide layers
   
   Fizika i Tekhnika Poluprovodnikov, 56:3 (2022),  328–334
4. A weak manifestation of the field effect in metal-dielectric-semiconductor structures with a ferroelectric insulating layer Ba$_{x}$Sr$_{1-x}$TiO$_{3}$
   
   Fizika Tverdogo Tela, 63:11 (2021),  1887–1889
5. Silicon ultrathin oxide (4.2 nm) – polysilicon structures resistant to field damages
   
   Fizika i Tekhnika Poluprovodnikov, 55:1 (2021),  24–27
6. Electrophysical properties investigation of Ba$_{0.8}$Sr$_{0.2}$TiO$_{3}$ ferroelectric films in paraelectric state
   
   Fizika Tverdogo Tela, 62:8 (2020),  1226–1231
7. Conductivity of metal–dielectric–semiconductor structures based on ferroelectric films
   
   Fizika Tverdogo Tela, 62:1 (2020),  121–124
8. Features of the characteristics of field-resistant silicon–ultrathin oxide–polysilicon structures
   
   Fizika i Tekhnika Poluprovodnikov, 53:4 (2019),  481–484
9. On the nature of the increase in the electron mobility in the inversion channel at the silicon–oxide interface after the field effect
   
   Fizika i Tekhnika Poluprovodnikov, 53:1 (2019),  89–92
10. Determination of the parameters of metal–insulator–semiconductor structures with ultrathin insulating layer from high-frequency capacitance–voltage measurements
    
    Fizika i Tekhnika Poluprovodnikov, 53:1 (2019),  46–49
11. Generation of surface electron states with a silicon–ultrathin-oxide interface under the field-induced damage of metal–oxide–semiconductor structures
    
    Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1185–1188
12. Features of high-frequency measurements of the impedance of metal-insulator-semiconductor structures with an ultrathin oxide
    
    Fizika i Tekhnika Poluprovodnikov, 49:4 (2015),  483–488
13. Manifestation of excess centers of electron-hole pair generation resulting from field and thermal stresses and their subsequent annihilation in dynamic current-voltage characteristics of Si-MOS structures with ultrathin oxide
    
    Fizika i Tekhnika Poluprovodnikov, 45:7 (2011),  974–979
14. Direct tunneling of electrons in Al–$n^+$-Si–SiO$_2$–$n$-Si structures under conditions of nonstationary depletion of the semiconductor surface of the majority charge carriers
    
    Fizika i Tekhnika Poluprovodnikov, 44:8 (2010),  1050–1052
15. Термическая генерация неосновных носителей заряда у границы раздела полупроводник$-$диэлектрик через глубокий уровень в приповерхностном слое обеднения
    
    Fizika i Tekhnika Poluprovodnikov, 26:12 (1992),  2048–2056
16. Determination of spatial disposition of localized electron states at semiconductor–dielectric interface
    
    Fizika i Tekhnika Poluprovodnikov, 26:4 (1992),  766–770