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Publications in Math-Net.Ru
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Выращивание кристаллов K$_2$O $\times$ 8Ga$_2$O$_3$ из раствора в расплаве KF и исследование их свойств
Optics and Spectroscopy, 133:11 (2025), 1150–1153
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Application of the liquid anode method to obtain spherical particles in plasma spraying of gold, silver, copper
Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:23 (2025), 46–49
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$\alpha$-Cr$_2$O$_3$ layers grown on (100) $\beta$-Ga$_2$O$_3$ substrates by ultrasonic vapor chemical epitaxy (mist-CVD)
Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:20 (2025), 21–23
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Deep ultraviolet photodetectors based on the In$_2$O$_3$–Ga$_2$O$_3$ mixed compounds films
Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:5 (2024), 7–9
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Influence of the rate of directional crystallization and silicon content on the structure and strength of the Al–Si–Cu alloy
Zhurnal Tekhnicheskoi Fiziki, 93:4 (2023), 554–561
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Record thick $\kappa(\varepsilon)$-Ga$_2$O$_3$ epitaxial layers grown on GaN/$c$-sapphire
Zhurnal Tekhnicheskoi Fiziki, 93:3 (2023), 403–408
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High sensitivity of halide vapor phase epitaxy grown indium oxide films to ammonia
Fizika i Tekhnika Poluprovodnikov, 57:3 (2023), 145–152
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Growth of $\beta$-Ga$_2$O$_3$ single crystals by the solution-melt method
Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:14 (2023), 16–18
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Synthesis of thin single-crystalline $\alpha$-Cr$_2$O$_3$ layers on sapphire substrates by ultrasonic-assisted chemical vapor deposition
Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:10 (2023), 43–46
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Growth of thick $\varepsilon(\kappa)$-Ga$_2$O$_3$ films by halide vapor phase epitaxy
Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:19 (2022), 35–38
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Gas-sensing properties of In$_2$O$_3$–Ga$_2$O$_3$ alloy films
Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:14 (2022), 37–41
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Formation of a dendrite structure in crystals NiFeGaCo alloy in the process of growing by the Stepanov method
Fizika Tverdogo Tela, 63:12 (2021), 2171–2177
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Tribological studies of $\alpha$-$\beta$-Ga$_{2}$O$_{3}$ layers paired with a sapphire counterface
Zhurnal Tekhnicheskoi Fiziki, 91:9 (2021), 1354–1362
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Mechanical properties of epilayers of metastable $\alpha$- and $\varepsilon$-Ga$_{2}$O$_{3}$ phases studied by nanoindentation
Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:14 (2021), 3–7
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Thick epitaxial $\alpha$-Ga$_{2}$O$_{3}$ : Sn layers on a patterned sapphire substrate
Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:5 (2020), 27–29
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Simulation of operating a cyclic actuator based on a circular force element made of shape memory material
Zhurnal Tekhnicheskoi Fiziki, 89:12 (2019), 1880–1884
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Simulation of operation of an actuator based on a flexural force element made of material with shape memory effect
Zhurnal Tekhnicheskoi Fiziki, 89:4 (2019), 550–555
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Thick $\alpha$-Ga$_{2}$O$_{3}$ layers on sapphire substrates grown by halide epitaxy
Fizika i Tekhnika Poluprovodnikov, 53:6 (2019), 789–792
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Microhardness and crack resistance of gallium oxide
Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:21 (2019), 51–54
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Strain concentration effect in Cu–Al–Ni single crystals under a longitudinal bending force
Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:21 (2018), 91–96
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Interfacial stresses and the anomalous character of thermoelastic-deformation curves of a Cu–Al–Ni shape-memory alloy
Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:24 (2017), 39–45
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On a reduction in cracking upon the growth of AlN on Si substrates by hydride vapor-phase epitaxy
Fizika i Tekhnika Poluprovodnikov, 50:4 (2016), 549–552
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The burst character of thermoelastic shape-memory deformation in crystals of Cu–Al–Ni alloys
Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:3 (2014), 57–63
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