Yachmenev Alexander Eduardovich

Publications in Math-Net.Ru

1. Features of the mesa-structure formation via electron-beam lithography in semiconductor GaAs-based compounds
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:21 (2025),  42–44
2. Efficient THz emission by a photoconductive emitter with tight photocarrier confinement within high-aspect ratio plasmonic electrodes
   
   Optics and Spectroscopy, 132:1 (2024),  105–110
3. Optical-to-terahertz switches: state of the art and new opportunities for multispectral imaging
   
   UFN, 194:1 (2024),  2–22
4. Photoconductive THz detector based on new functional layers in multi-layer heterostructures
   
   Optics and Spectroscopy, 129:6 (2021),  741–746
5. Emission efficiency of terahertz antennas with conventional topology and metal metasurface: a comparative analysis
   
   Optics and Spectroscopy, 128:7 (2020),  1012–1019
6. A photoconductive THz detector based on a superlattice heterostructure with plasmonic amplification
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:22 (2020),  10–14
7. Plasmonic photoconductive antennas for terahertz pulsed spectroscopy and imaging systems
   
   Optics and Spectroscopy, 126:5 (2019),  663–669
8. Ultrafast dynamics of photoexcited charge carriers in In$_{0.53}$Ga$_{0.47}$As/In$_{0.52}$Al$_{0.48}$As superlattices under femtosecond laser excitation
   
   Fizika i Tekhnika Poluprovodnikov, 52:7 (2018),  723–728
9. The role of excitation photons energy in the photoinduced carrier dynamics in InGaAs/InAlAs superlattice heterostructures
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:23 (2018),  146–157
10. Electrical and thermal properties of photoconductive antennas based on In$_{x}$Ga$_{1-x}$As ($x>$ 0.3) with a metamorphic buffer layer for the generation of terahertz radiation
    
    Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1267–1272
11. Terahertz radiation in In$_{0.38}$Ga$_{0.62}$As, grown on a GaAs wafer with a metamorphic buffer layer under femtosecond laser excitation
    
    Fizika i Tekhnika Poluprovodnikov, 51:4 (2017),  535–539
12. Epitaxial stresses in an InGaAs photoconductive layer for terahertz antennas
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:22 (2017),  48–54
13. Electron transport and optical properties of structures with atomic tin nanowires on vicinal GaAs substrates
    
    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  185–190
14. Investigation of the optical properties of GaAs with $\delta$-Si doping grown by molecular-beam epitaxy at low temperatures
    
    Fizika i Tekhnika Poluprovodnikov, 49:7 (2015),  932–935
15. MHEMT with a power-gain cut-off frequency of $f_{\mathrm{max}}$ = 0.63 THz on the basis of a In$_{0.42}$Al$_{0.58}$As/In$_{0.42}$Ga$_{0.58}$As/In$_{0.42}$Al$_{0.58}$As/GaAs nanoheterostructure
    
    Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  73–76