Portsel' Leonid Mikhailovich

Publications in Math-Net.Ru

1. Electrically inactive magnesium in silicon
   
   Fizika Tverdogo Tela, 67:5 (2025),  797–799
2. Three-electrode micro-discharge device: ions injection from the stationary townsend discharge
   
   Zhurnal Tekhnicheskoi Fiziki, 95:10 (2025),  2012–2020
3. Magnesium diffusion in silicon grown by the Czochralskii method
   
   Fizika Tverdogo Tela, 66:7 (2024),  1176–1179
4. Interaction of Mg with oxygen and carbon in silicon
   
   Fizika i Tekhnika Poluprovodnikov, 58:2 (2024),  75–77
5. Double magnesium donors as a potential active medium in the terahertz range
   
   Fizika i Tekhnika Poluprovodnikov, 57:6 (2023),  455–460
6. Solubility of magnesium in silicon
   
   Fizika i Tekhnika Poluprovodnikov, 56:9 (2022),  858–861
7. Thermal activation of valley-orbit states of neutral magnesium in silicon
   
   Fizika i Tekhnika Poluprovodnikov, 55:6 (2021),  500
8. Optical cross sections and oscillation strengths of magnesium double donor in silicon
   
   Fizika i Tekhnika Poluprovodnikov, 55:4 (2021),  299–303
9. Investigation of the magnesium impurity in silicon
   
   Fizika i Tekhnika Poluprovodnikov, 54:4 (2020),  321–326
10. Chemical shift and exchange interaction energy of the $1s$ states of magnesium donors in silicon. The possibility of stimulated emission
    
    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1263–1266
11. DLTS investigation of the energy spectrum of Si : Mg crystals
    
    Fizika i Tekhnika Poluprovodnikov, 53:6 (2019),  799–804
12. Decomposition of a solid solution of interstitial magnesium in silicon
    
    Fizika i Tekhnika Poluprovodnikov, 53:3 (2019),  314–316
13. High-temperature diffusion of magnesium in dislocation-free silicon
    
    Fizika i Tekhnika Poluprovodnikov, 51:8 (2017),  1075–1077
14. Diffusion of interstitial magnesium in dislocation-free silicon
    
    Fizika i Tekhnika Poluprovodnikov, 51:1 (2017),  5–7
15. Dynamics of the Townsend discharge in argon
    
    Zhurnal Tekhnicheskoi Fiziki, 85:5 (2015),  27–31
16. Formation of S$_2$ “quasi-molecules” in sulfur-doped silicon
    
    Fizika i Tekhnika Poluprovodnikov, 49:4 (2015),  433–434
17. Doping of silicon with selenium by diffusion from the gas phase
    
    Fizika i Tekhnika Poluprovodnikov, 48:3 (2014),  428–431
18. Silicon with an increased content of monoatomic sulfur centers: Sample fabrication and optical spectroscopy
    
    Fizika i Tekhnika Poluprovodnikov, 47:2 (2013),  211–215
19. Hexagonal structures of current in a “semiconductor–gas-discharge gap” system
    
    Zhurnal Tekhnicheskoi Fiziki, 81:2 (2011),  42–47
20. Photoconduction of Lightly Compensated Si$\langle\text{In}\rangle$ at $10.6\,\mu m$ Wavelength due to Ionization of $X$ Centers
    
    Fizika i Tekhnika Poluprovodnikov, 18:6 (1984),  1052–1055