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Publications in Math-Net.Ru
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Mechanisms of current transport in TiN/Ge$_2$Sb$_2$Te$_5$/Au structure
Fizika i Tekhnika Poluprovodnikov, 58:12 (2024), 662–667
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Influence of Bi impurity on the main parameters of the current-voltage characteristics of the Ge$_2$Sb$_2$Te$_5$ phase-change memory semiconductor
Fizika i Tekhnika Poluprovodnikov, 58:8 (2024), 443–447
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Optical properties of the Ge$_{14}$Sb$_{29}$Te$_{57}$ and Ge$_{15}$Sb$_{15}$Te$_{70}$ phase-change materials in the far-infrared range
Fizika i Tekhnika Poluprovodnikov, 55:7 (2021), 542–549
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Multilevel recording in Ge$_{2}$Sb$_{2}$Te$_{5}$ thin films
Fizika i Tekhnika Poluprovodnikov, 54:4 (2020), 372–375
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Estimation of the temperature of the current filament that forms upon switching in GeSbTe
Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1503–1506
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Voltage oscillations in the case of the switching effect in thin layers of Ge–Sb–Te chalcogenides in the current mode
Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 958–962
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Current-voltage characteristics of thin Ge$_2$Sb$_2$Te$_5$ films taken using a measuring circuit with a current source
Zhurnal Tekhnicheskoi Fiziki, 84:4 (2014), 80–84
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Charge carrier transport in Ge$_{20}$As$_{20}$S$_{60}$ chalcogenide semiconductor films
Fizika i Tekhnika Poluprovodnikov, 44:1 (2010), 79–81
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Bipolar Phot oc on duct ion in Chalcogenide Glass-Like Semiconductors of
the Ge$-$Pb$-$S System
Fizika i Tekhnika Poluprovodnikov, 18:6 (1984), 1016–1020
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