Romanovich Dmitry Nikolaevich

Publications in Math-Net.Ru

1. Investigation of the quasi-cw heating dynamics of an active region of high-power semiconductor lasers (λ = 1060 nm) with an ultra-wide emitting aperture (800 μm)
   
   Kvantovaya Elektronika, 52:9 (2022),  794–798
2. High-power quasi-cw semiconductor lasers (1060 nm) with an ultra-wide emitting aperture
   
   Kvantovaya Elektronika, 52:4 (2022),  340–342
3. High-power mesa-stripe semiconductor lasers (910 nm) with an ultra-wide emitting aperture based on tunnel-coupled InGaAs/AlGaAs/GaAs heterostructures
   
   Kvantovaya Elektronika, 52:2 (2022),  174–178
4. Turn on process spatial dynamics of a thyristor laser (905nm) based on an AlGaAs/InGaAs/GaAs heterostructure
   
   Fizika i Tekhnika Poluprovodnikov, 55:5 (2021),  466–472
5. Analysis of the threshold conditions and lasing efficiency of internally circulating modes in large rectangular cavities based on AlGaAs/GaAs/InGaAs laser heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 55:5 (2021),  460–465
6. Output optical power dynamics of semiconductor lasers (1070 nm) with a few-mode lateral waveguide of mesa-stripe design at ultrahigh drive currents
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:7 (2021),  42–45
7. High-power pulsed hybrid semiconductor lasers emitting in the wavelength range 900–920 nm
   
   Kvantovaya Elektronika, 51:10 (2021),  912–914
8. Switching control model of closed-mode structures in large rectangular cavities based on AlGaAs/InGaAs/GaAs laser heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 54:5 (2020),  484–489
9. Carrier-transport processes in $n^{+}$-GaAs/$n^{0}$-GaAs/$n^{+}$-GaAs isotype heterostructures with a thin wide-gap AlGaAs barrier
   
   Fizika i Tekhnika Poluprovodnikov, 54:5 (2020),  452–457
10. Сlosed mode features in rectangular resonators based on InGaAs/AlGaAs/GaAs laser heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 53:6 (2019),  839–843
11. Specific features of carrier transport in $n^{+}$–$n^{0}$–$n^{+}$ structures with a GaAs/AlGaAs heterojunction at ultrahigh current densities
    
    Fizika i Tekhnika Poluprovodnikov, 53:6 (2019),  816–823
12. Experimental studies of the on-state propagation dynamics of low-voltage laser-thyristors based on AlGaAs/InGaAs/GaAs heterostructures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:8 (2019),  7–11