Rudova Natalia Alexandrovna

Publications in Math-Net.Ru

1. Compact high-power nanosecond-duration laser pulse sources (940 nm) based on “semiconductor laser – thyristor switch” vertical stacks
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:11 (2025),  7–10
2. Low-voltage InP heterostyristors for 50–150 ns current pulses generation
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:16 (2023),  29–32
3. Investigation of the quasi-cw heating dynamics of an active region of high-power semiconductor lasers (λ = 1060 nm) with an ultra-wide emitting aperture (800 μm)
   
   Kvantovaya Elektronika, 52:9 (2022),  794–798
4. InGaAs/AlGaAs/GaAs semiconductor lasers ($\lambda$ = 900–920 nm) with broadened asymmetric waveguides and improved current–voltage characteristics
   
   Kvantovaya Elektronika, 51:10 (2021),  905–908
5. Single-mode lasers (1050 nm) of mesa-stripe design based on an AlGaAs/GaAs heterostructure with an ultra-narrow waveguide
   
   Fizika i Tekhnika Poluprovodnikov, 54:4 (2020),  414–419
6. Light characteristics of narrow-stripe high-power semiconductor lasers (1060 nm) based on asymmetric AlGaAs/GaAs heterostructures with a broad waveguide
   
   Fizika i Tekhnika Poluprovodnikov, 54:4 (2020),  408–413
7. Diode lasers emitting at 1190 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate
   
   Fizika i Tekhnika Poluprovodnikov, 45:9 (2011),  1274–1278
8. Electroluminescence and absorption spectra of low-optical-loss semiconductor lasers based on InGaAs/AlGaAs/GaAs QW heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 45:5 (2011),  682–687
9. Temperature dependence of the threshold current density and external differential quantum efficiency of semiconductor lasers ($\lambda$ = 900–920 nm)
   
   Fizika i Tekhnika Poluprovodnikov, 44:10 (2010),  1417–1421