Markevich V P

Publications in Math-Net.Ru

1. Optical properties and the mechanism of the formation of V$_{2}$O$_{2}$ and V$_{3}$O$_{2}$ vacancy–oxygen complexes in irradiated silicon crystals
   
   Fizika i Tekhnika Poluprovodnikov, 52:9 (2018),  973–979
2. Formation of donors in germanium–silicon alloys implanted with hydrogen ions with different energies
   
   Fizika i Tekhnika Poluprovodnikov, 50:8 (2016),  1143–1145
3. Radiation-induced bistable centers with deep levels in silicon $n^{+}$–$p$ structures
   
   Fizika i Tekhnika Poluprovodnikov, 50:6 (2016),  767–771
4. Formation and annealing of radiation defects in tin-doped $p$-type germanium crystals
   
   Fizika i Tekhnika Poluprovodnikov, 46:5 (2012),  629–632
5. On the acceptor levels of divacancy in silicon
   
   Fizika i Tekhnika Poluprovodnikov, 26:11 (1992),  2006–2010
6. Kinetics of thermodonor formation in Si $\langle\text{Ge, O}\rangle$ crystals
   
   Fizika i Tekhnika Poluprovodnikov, 26:4 (1992),  682–690
7. Reconstructing Thermodonors in Silicon
   
   Fizika i Tekhnika Poluprovodnikov, 18:3 (1984),  526–531