Sobolev Mikhail Mikhailovich

Publications in Math-Net.Ru

1. Identification of conditions for the formation of deep states of mismatch dislocations and DX centers in heteroepitaxial lightly doped Al$_x$Ga$_{1-x}$As$_{1-y}$Sb$_y$/GaAs layers
   
   Fizika i Tekhnika Poluprovodnikov, 59:3 (2025),  165–170
2. Identification of the main recombination channels in lightly doped layers of GaAs $p$–$i$–$n$-diodes before and after irradiation with 1 MeV neutrons
   
   Fizika i Tekhnika Poluprovodnikov, 58:8 (2024),  453–460
3. Defects with deep levels in high-voltage gradual $p$–$i$–$n$ heterojunctions AlGaAsSb/GaAs
   
   Fizika i Tekhnika Poluprovodnikov, 57:8 (2023),  644–647
4. Effect of neutron irradiation on the spectrum of deep-level defects in GaAs grown by liquid-phase epitaxy in hydrogen or argon ambient
   
   Fizika i Tekhnika Poluprovodnikov, 56:1 (2022),  53–60
5. Capacitance spectroscopy of heteroepitaxial AlGaAs/GaAs $p$–$i$–$n$ structures
   
   Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1072–1078
6. Impact of percolation effect on temperature dependences of the capacitance-voltage characteristics of heterostructures based on composite layers of silicon and gold nanoparticles
   
   Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1431–1436
7. Effect of dislocation-related deep levels in heteroepitaxial InGaAs/GaAs and GaAsSb/GaAs $p$–$i$–$n$ structures on the relaxation time of nonequilibrium carriers
   
   Fizika i Tekhnika Poluprovodnikov, 52:2 (2018),  177–183
8. Spatial and quantum confinement of Si nanoparticles deposited by laser electrodispersion onto crystalline Si
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:7 (2018),  30–38
9. Study of deep levels in GaAs $p$–$i$–$n$ structures
   
   Fizika i Tekhnika Poluprovodnikov, 50:7 (2016),  941–945
10. Emission spectra of a laser based on an In(Ga)As/GaAs quantum-dot superlattice
    
    Fizika i Tekhnika Poluprovodnikov, 49:10 (2015),  1379–1385
11. Influence of GaAs spacer-layer thickness on quantum coupling and optical polarization in a ten-layer system of vertically correlated InAs/GaAs quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 48:8 (2014),  1059–1064
12. Polarization dependences of electroluminescence and absorption of vertically correlated InAs/GaAs QDs
    
    Fizika i Tekhnika Poluprovodnikov, 46:1 (2012),  96–102
13. Room-temperature optical absorption in the InAs/GaAs quantum-dot superlattice under an electric field
    
    Fizika i Tekhnika Poluprovodnikov, 45:8 (2011),  1095–1101
14. Passive mode-locked laser based on quantum dot superlattice
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:18 (2011),  31–36
15. Wannier–Stark states in a superlattice of InAs/GaAs quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 44:6 (2010),  790–794
16. Mechanism of degradation of GaAs/AlGaAs laser with quantum pit
    
    Fizika i Tekhnika Poluprovodnikov, 26:10 (1992),  1760–1767
17. Electron-Probe Study of Deep Centers in Undoped GaAs
    
    Fizika i Tekhnika Poluprovodnikov, 18:2 (1984),  383–385