L'vova Tat'yana Victorovna

Publications in Math-Net.Ru

1. Evolution of the native oxide composition on Al$_{0.3}$Ga$_{0.7}$As(100)
   
   Fizika i Tekhnika Poluprovodnikov, 58:11 (2024),  636–643
2. Passivation of AlGaAs(100) surfaces with ammonium sulfide solutions
   
   Fizika i Tekhnika Poluprovodnikov, 58:6 (2024),  302–312
3. Correlation of the electronic and atomic structure at passivated n-InP(100) surfaces
   
   Fizika i Tekhnika Poluprovodnikov, 56:7 (2022),  659–666
4. Modification of the electronic properties of the $n$-InP(100) surface with sulfide solutions
   
   Fizika i Tekhnika Poluprovodnikov, 55:10 (2021),  895–900
5. Optical and electronic properties of passivated InP(001) surfaces
   
   Fizika i Tekhnika Poluprovodnikov, 55:8 (2021),  644–648
6. Synthesis of hexagonal AlN и GaN layers on a Si(100) substrate by chloride vapor-phase epitaxy
   
   Zhurnal Tekhnicheskoi Fiziki, 89:4 (2019),  574–577
7. Development of the physicochemical properties of the GaSb(100) surface in ammonium sulfide solutions
   
   Fizika i Tekhnika Poluprovodnikov, 53:7 (2019),  908–916
8. Hexagonal AlN layers grown on sulfided Si(100) substrate
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:2 (2018),  96–103
9. Effect of ammonium-sulfide solvent on the surface passivation of GaSb (100)
   
   Fizika i Tekhnika Poluprovodnikov, 51:8 (2017),  1138–1145
10. Photoreflectance of indium antimonide
    
    Fizika Tverdogo Tela, 58:12 (2016),  2307–2313
11. Sulfur passivation of semi-insulating GaAs: transition from Coulomb blockade to weak localization regime
    
    Fizika i Tekhnika Poluprovodnikov, 50:4 (2016),  474–484
12. The effect of sulfide passivation on luminescence from microdisks with quantum wells and quantum dots
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:13 (2015),  86–94
13. Chemical passivation of InSb (100) substrates in aqueous solutions of sodium sulfide
    
    Fizika i Tekhnika Poluprovodnikov, 47:5 (2013),  710–716
14. Electron auger spectroscopy and reflectance anisotropy spectroscopy of monolayer nitride films on (001) surfaces of GaAs and GaSb crystals
    
    Fizika i Tekhnika Poluprovodnikov, 46:11 (2012),  1463–1467
15. Nitride chemical passivation of a GaAs (100) Surface: Effect on the electrical characteristics of Au/GaAs surface-barrier structures
    
    Fizika i Tekhnika Poluprovodnikov, 45:12 (2011),  1637–1641
16. Sulfide passivation of $\mathrm{A}^{3}\mathrm{B}^{5}$ semiconductors: model description and experiment
    
    Fizika Tverdogo Tela, 34:6 (1992),  1713–1718
17. Anisotropy of gallium-arsenide optical reflection in the range of fundamental-absorption edge
    
    Fizika i Tekhnika Poluprovodnikov, 26:7 (1992),  1264–1268
18. On the Kinetics of the Enchancement of Barrier-Structure Rectifier Photoelectromotive Force
    
    Fizika i Tekhnika Poluprovodnikov, 18:7 (1984),  1256–1262