Publications in Math-Net.Ru
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Structural, electrical, and optical properties of 4$H$-SiC for ultraviolet photodetectors
Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1368–1373
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Effect of temperature on the characteristics of 4$H$-SiC UV photodetectors
Fizika i Tekhnika Poluprovodnikov, 54:2 (2020), 195–201
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Proton irradiation of 4$H$-SiC photodetectors with Schottky barriers
Fizika i Tekhnika Poluprovodnikov, 53:6 (2019), 856–861
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Quantum efficiency of 4$H$-SiC detectors within the range of 114–400 nm
Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:20 (2016), 73–78
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Irradiation of 4H-SiC UV detectors with heavy ions
Fizika i Tekhnika Poluprovodnikov, 49:4 (2015), 550–556
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A high-temperature radiation-resistant rectifier based on $p^+$–$n$ junctions in 4H-SiC ion-implanted with aluminum
Fizika i Tekhnika Poluprovodnikov, 44:6 (2010), 807–816
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Effect of temperature annealing on the properties of $a$-$\mathrm{Si}_{1-x}\mathrm{C}_{x}$ films $(0<x \leqslant 1)$
Fizika Tverdogo Tela, 34:1 (1992), 326–328
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