Kon'kov Oleg Igorevich

Publications in Math-Net.Ru

1. Anisotropic “X-ray diffraction” dimensions of ellipsoid-shaped crystallites of cathode powders LiFePO$_4$
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:1 (2024),  5–9
2. Features of Raman light scattering spectra in the 2100 cm$^{-1}$ line region by carbon formations in thin gradient gold films
   
   Fizika Tverdogo Tela, 65:4 (2023),  618–623
3. Inelastic light scattering by self-formed linear-chain aggregates of carbon atoms in gold island films
   
   Fizika Tverdogo Tela, 64:4 (2022),  505–510
4. High-voltage 4$H$-SiC based avalanche diodes with a negative beve
   
   Fizika i Tekhnika Poluprovodnikov, 55:4 (2021),  349–353
5. High-voltage 4$H$-SiC Schottky diodes with field-plate edge termination
   
   Fizika i Tekhnika Poluprovodnikov, 55:2 (2021),  188–194
6. The effect of texturing of silicon wafer surfaces for solar photoelectric transducers on their strength properties
   
   Zhurnal Tekhnicheskoi Fiziki, 90:7 (2020),  1168–1174
7. Micro-profiling of 4$H$-SiC by dry etching to form a Schottky barrier diode
   
   Fizika i Tekhnika Poluprovodnikov, 54:1 (2020),  97–102
8. 4$H$-SiC based subnanosecond (150 ps) high-voltage (1600 V) current breakers
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:3 (2018),  3–8
9. Dynamic characteristics of 4H-SiC drift step recovery diodes
   
   Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1558–1562
10. Resistance of 4H-SiC Schottky barriers at high forward-current densities
    
    Fizika i Tekhnika Poluprovodnikov, 49:7 (2015),  951–955
11. Modification of the structure and percolation of current in an array of single-walled carbon nanotubes
    
    Fizika Tverdogo Tela, 56:7 (2014),  1411–1414
12. On the collection of photocarriers in high-resistance silicon amorphous-crystalline heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 48:9 (2014),  1198–1204
13. The photosensitivity of amorphous-crystalline silicon heterostructures with an inversion channel
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:9 (2014),  72–79
14. Modification of the structure and hydrogen content of amorphous hydrogenated silicon films under conditions of femtosecond laser-induced crystallization
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:4 (2014),  1–8
15. Microdetermination of titanium on the developed silicon surface using cells made of perfluorinated proton-conducting membranes
    
    Zhurnal Tekhnicheskoi Fiziki, 83:5 (2013),  147–150
16. Specific features of nanosecond current-voltage characteristics of an array of carbon nanotubes
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:6 (2013),  67–73
17. Percolation, self-organized criticality, and electrical instability in carbon nanostructures
    
    Fizika Tverdogo Tela, 54:11 (2012),  2189–2192
18. Carbon nanostructures as an example of the self-organized criticality
    
    Fizika Tverdogo Tela, 54:3 (2012),  600–603
19. Effect of the femtosecond laser treatment of hydrogenated amorphous silicon films on their structural, optical, and photoelectric properties
    
    Fizika i Tekhnika Poluprovodnikov, 46:6 (2012),  769–774
20. Leakage currents in 4H-SiC JBS diodes
    
    Fizika i Tekhnika Poluprovodnikov, 46:3 (2012),  411–415
21. I–V characteristics of high-voltage 4H-SiC diodes with a 1.1-eV Schottky barrier
    
    Fizika i Tekhnika Poluprovodnikov, 45:10 (2011),  1427–1430
22. High-voltage (3.3 kV) 4H-SiC JBS diodes
    
    Fizika i Tekhnika Poluprovodnikov, 45:5 (2011),  677–681
23. Specific features of amorphous silicon layers grown by plasma-enhanced chemical vapor deposition with tetrafluorosilane
    
    Fizika i Tekhnika Poluprovodnikov, 45:3 (2011),  312–315
24. Portable power source based on air-hydrogen fuel cells with free-breathing cathodes
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:9 (2011),  45–54
25. Excess leakage currents in high-voltage 4H-SiC Schottky diodes
    
    Fizika i Tekhnika Poluprovodnikov, 44:5 (2010),  680–683
26. Effect of temperature annealing on the properties of $a$-$\mathrm{Si}_{1-x}\mathrm{C}_{x}$ films $(0<x \leqslant 1)$
    
    Fizika Tverdogo Tela, 34:1 (1992),  326–328