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Publications in Math-Net.Ru
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Manganese clusterization in ZnS : Mn, Mg synthesized by self-propagating high-temperature synthesis
Fizika i Tekhnika Poluprovodnikov, 54:3 (2020), 259–265
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Features of the temperature dependence of the specific contact resistance of Au–Ti–Pd–$n^{+}$–$n$-Si diffusion silicon structures
Fizika i Tekhnika Poluprovodnikov, 53:4 (2019), 485–492
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Temperature dependences of the contact resistivity in ohmic contacts to $n^+$-InN
Fizika i Tekhnika Poluprovodnikov, 49:4 (2015), 472–482
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Structuring effect of heteroepitaxial CdHgTe/CdZnTe systems under irradiation with silver ions
Fizika Tverdogo Tela, 56:11 (2014), 2091–2096
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Integrated microwave (centimeter-range) modulator on polycrystalline diamond layers
Zhurnal Tekhnicheskoi Fiziki, 83:3 (2013), 113–117
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Formation mechanism of contact resistance to III–N heterostructures with a high dislocation density
Fizika i Tekhnika Poluprovodnikov, 47:9 (2013), 1191–1195
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Features of ZnS-powder doping with a Mn impurity during synthesis and subsequent annealing
Fizika i Tekhnika Poluprovodnikov, 47:5 (2013), 702–709
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The mechanism of contact-resistance formation on lapped $n$-Si surfaces
Fizika i Tekhnika Poluprovodnikov, 47:3 (2013), 426–431
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Effects of the lateral ordering of self-assembled SiGe nanoislands grown on strained Si$_{1-x}$Ge$_x$ buffer layers
Fizika i Tekhnika Poluprovodnikov, 46:5 (2012), 665–672
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Structural transformations in ZnS:Cu in the course of thermal annealing
Fizika i Tekhnika Poluprovodnikov, 46:2 (2012), 198–203
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Evolution of the deformation state and composition as a result of changes in the number of quantum wells in multilayered InGaN/GaN structures
Fizika i Tekhnika Poluprovodnikov, 45:6 (2011), 770–777
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Effect of $p$–$n$ junction overheating on degradation of silicon high-power pulsed IMPATT diodes
Fizika i Tekhnika Poluprovodnikov, 45:2 (2011), 256–262
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Diffuse X-Ray scattering from crystalline systems with ellipsoidal quantum dots
Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:8 (2011), 41–48
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Radiation effects and interphase interactions in ohmic and barrier contacts to indium phosphide as induced by rapid thermal annealing and irradiation with $\gamma$-ray $^{60}$Co photons
Fizika i Tekhnika Poluprovodnikov, 44:12 (2010), 1607–1614
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X-ray diffraction analysis and scanning micro-Raman spectroscopy of structural irregularities and strains deep inside the multilayered InGaN/GaN heterostructure
Fizika i Tekhnika Poluprovodnikov, 44:9 (2010), 1236–1247
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Effect of long-range interaction in GaAs single crystals with different density of dislocations
Fizika i Tekhnika Poluprovodnikov, 26:11 (1992), 1932–1937
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Effect of substrate thinning on optical properties of gallium-arsenide epitaxial layers (remote-action effect)
Fizika i Tekhnika Poluprovodnikov, 26:2 (1992), 368–372
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Effect of substrate thinning on the deformation field distribution in epitaxial $\mathrm{GaAs}$ structures
Fizika Tverdogo Tela, 33:11 (1991), 3192–3198
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