Boitsov S K

Publications in Math-Net.Ru

1. On tunneling through the interfacial ($19$–$50$ A thick) oxide layer of silicon SIS structures
   
   Fizika Tverdogo Tela, 34:5 (1992),  1465–1472
2. Effect of photocurrent amplification in semiconductor–tunnelly transparent dielectric–semiconductor structures
   
   Fizika i Tekhnika Poluprovodnikov, 26:2 (1992),  295–304
3. Current–voltage and capacity–voltage characteristics of silicon semiconductor–dielectric–semiconductor structures with dielectric of thickness less than 50 Angströms
   
   Fizika i Tekhnika Poluprovodnikov, 26:1 (1992),  146–149
4. kinetics of silicon oxidation and structure of oxide layers of thickness less than 50 Angströms
   
   Fizika i Tekhnika Poluprovodnikov, 26:1 (1992),  111–121
5. Current passage through a tunneling-transparent insulator
   
   Fizika Tverdogo Tela, 33:6 (1991),  1784–1791