Feoktistov Nikolay Aleksandrovich

Publications in Math-Net.Ru

1. Spatially periodic hybrid structures based on opal films coated with $a$-Si:C:H layer: synthesis and emitting properties
   
   Optics and Spectroscopy, 133:10 (2025),  1054–1058
2. Increasing the efficiency of silicon-vacancy color center radiation collection from diamond microspheres using a glass microsphere
   
   Optics and Spectroscopy, 133:10 (2025),  1045–1047
3. Effect of boron doping on luminescent properties of silicon–vacancy and germanium–vacancy color centers in diamond particles obtained by chemical vapor deposition
   
   Fizika Tverdogo Tela, 64:10 (2022),  1525–1530
4. Photoluminescence of germanium-vacancy color centers in diamond particles obtained by chemical vapor deposition
   
   Fizika Tverdogo Tela, 62:5 (2020),  807–813
5. Two-stage conversion of silicon to nanostructured carbon by the method of coordinated atomic substitution
   
   Fizika Tverdogo Tela, 61:3 (2019),  587–593
6. Template synthesis of monodisperse submicrometer spherical nanoporous silicon particles
   
   Fizika i Tekhnika Poluprovodnikov, 53:8 (2019),  1068–1073
7. Spherical distributed Bragg reflector with an omnidirectional stop band in the near-IR spectral range
   
   Fizika i Tekhnika Poluprovodnikov, 53:7 (2019),  917–921
8. IR spectra of carbon-vacancy clusters in the topochemical transformation of silicon into silicon carbide
   
   Fizika Tverdogo Tela, 59:12 (2017),  2403–2408
9. New luminescence lines in nanodiamonds obtained by chemical vapor deposition
   
   Fizika Tverdogo Tela, 59:12 (2017),  2382–2386
10. Photoelectric characteristics of silicon carbide–silicon structures grown by the atomic substitution method in a silicon crystal lattice
    
    Fizika i Tekhnika Poluprovodnikov, 51:5 (2017),  651–658
11. A spherical distributed Bragg reflector based on $a$-Si$_{1-x}$C$_{x}$ : H and $a$-SiO$_{2}$
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:19 (2017),  35–42
12. Epitaxial gallium oxide on a SiC/Si substrate
    
    Fizika Tverdogo Tela, 58:9 (2016),  1812–1817
13. Asymmetric planar luminescent waveguide based on amorphous silicon carbide with polarized radiation in leaky modes
    
    Zhurnal Tekhnicheskoi Fiziki, 86:5 (2016),  118–123
14. Infrared spectroscopy of silicon carbide layers synthesized by the substitution of atoms on the surface of single-crystal silicon
    
    Fizika Tverdogo Tela, 57:12 (2015),  2469–2474
15. Evolution of the morphology of diamond particles and mechanism of their growth during the synthesis by chemical vapor deposition
    
    Fizika Tverdogo Tela, 57:11 (2015),  2125–2130
16. Whispering gallery modes in a spherical microcavity with a photoluminescent shell
    
    Fizika i Tekhnika Poluprovodnikov, 49:10 (2015),  1415–1420
17. Determining the content and binding energy of hydrogen in diamond films
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:11 (2015),  56–61
18. Synthesis of epitaxial silicon carbide films through the substitution of atoms in the silicon crystal lattice: A review
    
    Fizika Tverdogo Tela, 56:8 (2014),  1457–1485
19. Planar microcavity containing luminescent diamond particles with embedded silicon–vacancy color centers in its active layer
    
    Fizika i Tekhnika Poluprovodnikov, 48:11 (2014),  1543–1548
20. Planar light-emitting microcavities based on hydrogenated amorphous silicon carbide
    
    Fizika i Tekhnika Poluprovodnikov, 48:10 (2014),  1409–1415
21. Chemical vapor deposition of isolated spherical diamond particles with embedded silicon-vacancy color centers onto the surface of synthetic opal
    
    Fizika i Tekhnika Poluprovodnikov, 48:2 (2014),  283–286
22. Epitaxy of semipolar GaN on a Si(001) substrate with a SiC buffer layer
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:9 (2014),  48–54
23. Epitaxial silicon carbide on a 6" silicon wafer
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:1 (2014),  71–79
24. Carrier mobility in undoped SiC layers grown on silicon by a new epitaxial technique
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:10 (2013),  81–88
25. Spherical microresonators with luminescent $a$-Si: C: H coating
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:7 (2013),  51–57
26. Group-III-nitride-based light-emitting diode on silicon substrate with epitaxial nanolayer of silicon carbide
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:6 (2012),  90–95
27. Aerosol deposition of detonation nanodiamonds used as nucleation centers for the growth of nanocrystalline diamond films and isolated particles
    
    Zhurnal Tekhnicheskoi Fiziki, 81:5 (2011),  132–138
28. Structural characterization of GaN epilayers on silicon: Effect of buffer layers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:7 (2011),  72–79
29. Boron-doped transparent conducting nanodiamond films
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:7 (2011),  64–71
30. Aluminum nitride on silicon: Role of silicon carbide interlayer and chloride vapor-phase epitaxy technology
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:11 (2010),  17–23
31. Electroluminescence in $p{-}i{-}n$ structures based on $a$-Si$_{1-x}$C$_{x}$ : H
    
    Fizika i Tekhnika Poluprovodnikov, 26:4 (1992),  750–754
32. Electron states in an amorphous semiconductor with mobile impurities. Thermally stimulated processes in $a$-$\mathrm{Si}:\mathrm{H}$
    
    Fizika Tverdogo Tela, 32:12 (1990),  3599–3612