Stankevich Aleksey L

Publications in Math-Net.Ru

1. Properties of epitaxial (Al$_x$Ga$_{1-x}$As)$_{1-y}$C$_y$ alloys grown by MOCVD autoepitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 47:1 (2013),  9–14
2. Superstructured ordering in Al$_x$Ga$_{1-x}$As and Ga$_x$In$_{1-x}$P alloys
   
   Fizika i Tekhnika Poluprovodnikov, 47:1 (2013),  3–8
3. 850-nm diode lasers based on AlGaAsP/GaAs heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 46:10 (2012),  1344–1348
4. Temperature dependence of the threshold current density in semiconductor lasers ($\lambda$ = 1050–1070 nm)
   
   Fizika i Tekhnika Poluprovodnikov, 46:9 (2012),  1234–1238
5. Thermal delocalization of carriers in semiconductor lasers ($\lambda$ = 1010–1070 nm)
   
   Fizika i Tekhnika Poluprovodnikov, 46:9 (2012),  1230–1233
6. Structural and spectral features of MOCVD Al$_x$Ga$_y$In$_{1-x-y}$As$_z$P$_{1-z}$/GaAs (100) alloys
   
   Fizika i Tekhnika Poluprovodnikov, 46:6 (2012),  739–750
7. Analysis of quenching conditions of Fabry–Perot mode lasing in semiconductor stripe-contact lasers
   
   Fizika i Tekhnika Poluprovodnikov, 45:10 (2011),  1431–1438
8. Diode lasers emitting at 1220 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate
   
   Fizika i Tekhnika Poluprovodnikov, 45:10 (2011),  1417–1421
9. Diode lasers emitting at 1190 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate
   
   Fizika i Tekhnika Poluprovodnikov, 45:9 (2011),  1274–1278
10. Electroluminescence and absorption spectra of low-optical-loss semiconductor lasers based on InGaAs/AlGaAs/GaAs QW heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 45:5 (2011),  682–687
11. Effect of silicon on relaxation of the crystal lattice in MOCVD–hydride Al$_x$Ga$_{1-x}$As (100) heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 45:4 (2011),  488–499
12. InGaAs/GaAs/AlGaAs lasers emitting at a wavelength of 1190 nm grown by MOCVD epitaxy on GaAs substrate
    
    Fizika i Tekhnika Poluprovodnikov, 44:12 (2010),  1640–1644
13. Relaxation of crystal lattice parameters and structural ordering in In$_x$Ga$_{1-x}$As epitaxial alloys
    
    Fizika i Tekhnika Poluprovodnikov, 44:8 (2010),  1140–1146
14. Two-band lasing in epitaxially stacked tunnel-junction semiconductor lasers
    
    Fizika i Tekhnika Poluprovodnikov, 44:6 (2010),  833–836
15. Temperature delocalization of charge carriers in semiconductor lasers
    
    Fizika i Tekhnika Poluprovodnikov, 44:5 (2010),  688–693
16. Effect of the active region thickness on characteristics of semiconductor lasers based on asymmetric AlGaAs/GaAs/InGaAs heterostructures with broadened waveguide
    
    Fizika i Tekhnika Poluprovodnikov, 44:2 (2010),  246–250
17. Quantum-confined two-photon absorption in semiconductor microcrystals
    
    Fizika Tverdogo Tela, 34:5 (1992),  1613–1619
18. Metal vaporization by laser radiation at the critical temperature
    
    Fizika Tverdogo Tela, 34:3 (1992),  801–805
19. Interference diagnostics of the plasma-induced refractive index of $\mathrm{GaAs}$
    
    Fizika Tverdogo Tela, 32:9 (1990),  2689–2693