Stadnyk Yu V

Publications in Math-Net.Ru

1. Features of the band structure and conduction mechanisms of $n$-HfNiSn heavily doped with Y
   
   Fizika i Tekhnika Poluprovodnikov, 51:2 (2017),  147–153
2. Features of conductivity mechanisms in heavily doped compensated V$_{1-x}$Ti$_{x}$FeSb semiconductor
   
   Fizika i Tekhnika Poluprovodnikov, 50:7 (2016),  877–885
3. Structural defect generation and band-structure features in the HfNi$_{1-x}$Co$_x$Sn semiconductor
   
   Fizika i Tekhnika Poluprovodnikov, 49:8 (2015),  1009–1015
4. Features of the band structure and conduction mechanisms of $n$-HfNiSn semiconductor heavily Lu-doped
   
   Fizika i Tekhnika Poluprovodnikov, 49:3 (2015),  299–306
5. Features of the band structure and conduction mechanisms in the $n$-HfNiSn semiconductor heavily doped with Ru
   
   Fizika i Tekhnika Poluprovodnikov, 48:12 (2014),  1585–1591
6. Features of conduction mechanisms in $n$-HfNiSn semiconductor heavily doped with a Rh acceptor impurity
   
   Fizika i Tekhnika Poluprovodnikov, 47:9 (2013),  1157–1164
7. Effect of the accumulation of excess Ni atoms in the crystal structure of the intermetallic semiconductor $n$-ZrNiSn
   
   Fizika i Tekhnika Poluprovodnikov, 47:7 (2013),  882–889
8. Features of the conduction mechanisms of the $n$-HfNiSn semiconductor heavily doped with the Co acceptor impurity
   
   Fizika i Tekhnika Poluprovodnikov, 46:9 (2012),  1130–1137
9. Features of conductivity of the intermetallic semiconductor $n$-ZrNiSn heavily doped with a Bi donor impurity
   
   Fizika i Tekhnika Poluprovodnikov, 46:7 (2012),  910–917
10. Features of a priori heavy doping of the $n$-TiNiSn intermetallic semiconductor
    
    Fizika i Tekhnika Poluprovodnikov, 45:7 (2011),  879–885
11. Effect of vacancies on the magnetic and electric properties of Geiss ler phases in $\mathrm{Me}^{'}\mathrm{Co}_{2-x}\mathrm{Sn}(\mathrm{Me}^{'}=\mathrm{Ti},\mathrm{Zr},\mathrm{Hf})$
    
    Fizika Tverdogo Tela, 32:9 (1990),  2650–2654