Romanov Vyacheslav Vital'evich

Publications in Math-Net.Ru

1. Conductivity of nanocontact to A$^{\mathrm{III}}$As- and A$^{\mathrm{III}}$Sb semiconductors with a native oxide layer
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:11 (2024),  42–46
2. Features of the energy band structure of the InAsSbP epilayer deposited on a surface of the InAs$_{1-y}$Sb$_y$ solid solution
   
   Fizika Tverdogo Tela, 65:10 (2023),  1707–1714
3. Stimulated emission in the InAs/InAsSb/InAsSbP heterostructures with asymmetric electronic confinement
   
   Fizika i Tekhnika Poluprovodnikov, 56:9 (2022),  876–881
4. Band diagram of the InAs$_{1-y}$Sb$_{y}$/InAsSbP heterojunction in the composition range $y<$ 0.2
   
   Fizika Tverdogo Tela, 63:4 (2021),  475–482
5. Suppression of wavelength temperature dependence in heterostructures with staggered type II heterojunction InAsSb/InAsSbP
   
   Fizika i Tekhnika Poluprovodnikov, 55:3 (2021),  277–281
6. Forming a type-II heterojunction in the InAsSb/InAsSbP semiconductor structure
   
   Fizika Tverdogo Tela, 62:11 (2020),  1822–1827
7. Long-wavelength leds in the atmospheric transparency window of 4.6 – 5.3 $\mu$m
   
   Fizika i Tekhnika Poluprovodnikov, 54:2 (2020),  202–206
8. InAs$_{1-y}$Sb$_{y}$/InAsSbP narrow-gap heterostructures ($y$ = 0.09–0.16) grown by metalorganic vapor phase epitaxy for the spectral range of 4–6 $\mu$m
   
   Fizika Tverdogo Tela, 61:10 (2019),  1746–1753
9. Light–emitting diodes based on asymmetrical double InAs/InAsSb/InAsSbP heterostructure for CO$_{2}$ ($\lambda$ = 4.3 $\mu$m) and CO ($\lambda$ = 4.7 $\mu$m) detection
   
   Fizika i Tekhnika Poluprovodnikov, 53:6 (2019),  832–838
10. Rearrangement of electroluminescence spectra in type-II $n$-InAs/$n$-InAsSbP heterostructures
    
    Fizika Tverdogo Tela, 60:3 (2018),  585–590
11. Features of an InAsSbP epilayer formation on an InAs support by metalorganic vapor phase epitaxy
    
    Fizika Tverdogo Tela, 58:11 (2016),  2203–2207
12. Effect of multicomponent InAsSbP matrix surface on formation of InSb quantum dots at MOVPE growth
    
    Fizika i Tekhnika Poluprovodnikov, 50:7 (2016),  927–931
13. High-temperature interfacial electroluminescence in type-II broken-gap heterostructures based on InSb quantum dashes in $n$-InAs matrix
    
    Fizika i Tekhnika Poluprovodnikov, 48:7 (2014),  938–943
14. On InAsSbP epitaxial layers with ultimate phosphorus content, lattice-matched with an InAs substrate
    
    Fizika i Tekhnika Poluprovodnikov, 48:6 (2014),  753–758
15. Specific features of nanosize object formation in an InSb/InAs system by metal-organic vapor-phase epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 47:3 (2013),  420–425
16. Magnetic properties of single crystal $\alpha$-$\mathrm{LiIO}_{3}$ containing rare-earth ions
    
    Fizika Tverdogo Tela, 32:9 (1990),  2814–2816
17. $\mathrm{Tm}_{x}\mathrm{S}(0.9<x<1.11)$- a new concentrated Condo system
    
    Fizika Tverdogo Tela, 32:8 (1990),  2354–2362