Belyaev A E

Publications in Math-Net.Ru

1. Features of the temperature dependence of the specific contact resistance of Au–Ti–Pd–$n^{+}$–$n$-Si diffusion silicon structures
   
   Fizika i Tekhnika Poluprovodnikov, 53:4 (2019),  485–492
2. On a new mechanism for the realization of ohmic contacts
   
   Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  138–142
3. On the ohmicity of Schottky contacts
   
   Fizika i Tekhnika Poluprovodnikov, 50:6 (2016),  777–784
4. The temperature dependence of the resistivity of ohmic contacts based on gallium arsenide and indium phosphide in the 4.2–300 K range
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:12 (2016),  82–87
5. Temperature dependences of the contact resistivity in ohmic contacts to $n^+$-InN
   
   Fizika i Tekhnika Poluprovodnikov, 49:4 (2015),  472–482
6. Mechanism of current flow in a Au–Ti–Al–Ti–n$^+$-GaN ohmic contact in the temperature range of 4.2–300 K
   
   Fizika i Tekhnika Poluprovodnikov, 48:10 (2014),  1344–1347
7. Current flow through metal shunts in ohmic contacts to $n^+$-Si
   
   Fizika i Tekhnika Poluprovodnikov, 48:4 (2014),  509–513
8. Integrated microwave (centimeter-range) modulator on polycrystalline diamond layers
   
   Zhurnal Tekhnicheskoi Fiziki, 83:3 (2013),  113–117
9. Formation mechanism of contact resistance to III–N heterostructures with a high dislocation density
   
   Fizika i Tekhnika Poluprovodnikov, 47:9 (2013),  1191–1195
10. The mechanism of contact-resistance formation on lapped $n$-Si surfaces
    
    Fizika i Tekhnika Poluprovodnikov, 47:3 (2013),  426–431
11. Effect of microwave irradiation on the resistance of Au–TiB$_x$–Ge–Au–$n$–$n^+$–$n^{++}$-GaAs(InP) ohmic contacts
    
    Fizika i Tekhnika Poluprovodnikov, 46:4 (2012),  558–561
12. Temperature dependence of the contact resistance of ohmic contacts to III–V compounds with a high dislocation density
    
    Fizika i Tekhnika Poluprovodnikov, 46:3 (2012),  348–355
13. Temperature dependence of contact resistance for Au–Ti–Pd$_2$Si–n$^+$–Si ohmic contacts subjected to microwave irradiation
    
    Fizika i Tekhnika Poluprovodnikov, 46:3 (2012),  344–347
14. Electroreflectance study of the effect of $\gamma$ radiation on the optical properties of epitaxial GaN films
    
    Fizika i Tekhnika Poluprovodnikov, 46:3 (2012),  317–320
15. Evolution of the deformation state and composition as a result of changes in the number of quantum wells in multilayered InGaN/GaN structures
    
    Fizika i Tekhnika Poluprovodnikov, 45:6 (2011),  770–777
16. Effect of $p$–$n$ junction overheating on degradation of silicon high-power pulsed IMPATT diodes
    
    Fizika i Tekhnika Poluprovodnikov, 45:2 (2011),  256–262
17. Radiation effects and interphase interactions in ohmic and barrier contacts to indium phosphide as induced by rapid thermal annealing and irradiation with $\gamma$-ray $^{60}$Co photons
    
    Fizika i Tekhnika Poluprovodnikov, 44:12 (2010),  1607–1614
18. X-ray diffraction analysis and scanning micro-Raman spectroscopy of structural irregularities and strains deep inside the multilayered InGaN/GaN heterostructure
    
    Fizika i Tekhnika Poluprovodnikov, 44:9 (2010),  1236–1247
19. Effect of microwave treatment on current flow mechanisms in Au–TiB$_x$–Al–Ti–$n^+$–$n$–$n^+$-GaN–Al$_2$O$_3$ ohmic contacts
    
    Fizika i Tekhnika Poluprovodnikov, 44:6 (2010),  775–781
20. Radiation damage of contact structures with diffusion barriers exposed to irradiation with $^{60}$Co $\gamma$-ray photons
    
    Fizika i Tekhnika Poluprovodnikov, 44:4 (2010),  467–475
21. Mechanism of carrier mobility variation under ultrasonic treatment of semiconducting solid solutions
    
    Fizika Tverdogo Tela, 32:7 (1990),  2159–2161