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Radantsev Viktor Fedorovich
Publications in Math-Net.Ru
Electrical and morphological properties of CdTe films synthesized by the method of molecular deposition
Fizika i Tekhnika Poluprovodnikov
,
44
:5 (2010),
590–593
Characteristic properties of tunelling in Schottky barriers based on
$p$
-Hg
$_{1-x}$
Cd
$_{x}$
Te narrow-gap semiconductor
Fizika i Tekhnika Poluprovodnikov
,
26
:4 (1992),
691–702
Specific features of two-dimensional electron states in inversion layers of semimetallic
$\mathrm{Hg}_{1-x}\mathrm{Cd}_{x}\mathrm{Te}$
with fluctuation-stimulated band overlap
Fizika Tverdogo Tela
,
32
:7 (1990),
2067–2073
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Steklov Math. Inst. of RAS
, 2026