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Publications in Math-Net.Ru
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Шумовая спектроскопия тока в ультрафиолетовых светодиодах на основе InGaN/GaN-структур с квантовыми ямами
Pisma v Zhurnal Tekhnicheskoi Fiziki, 52:6 (2026), 45–48
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Physical aspects of changes in light-emitting structures with InGaN/GaN quantum wells during heating and short-term electrical influences
Optics and Spectroscopy, 133:4 (2025), 390–394
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Drop in external quantum efficiency during cooling and noise density during heating in InGaN ultraviolet LEDs
Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:16 (2024), 35–38
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Degradation of InGaN/GaN quantum well UV LEDs caused by short-term exposure to current
Zhurnal Tekhnicheskoi Fiziki, 92:2 (2022), 283–290
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Influence of low temperature on the electrophysical and noise characteristics of UV LEDs based on InGaN/GaN quantum well structures
Fizika i Tekhnika Poluprovodnikov, 56:6 (2022), 596–600
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Current noise and efficiency droop of light-emitting diodes in defect-assisted carrier tunneling from an InGaN/GaN quantum well
Fizika i Tekhnika Poluprovodnikov, 53:1 (2019), 104–110
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The effect of the transformation of point defects under Joule heating on efficiency of LEDs with InGaN/GaN quantum wells
Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:22 (2016), 1–8
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Hopping transport in the space-charge region of $p$–$n$ structures with InGaN/GaN QWs as a source of excess $1/f$ noise and efficiency droop in LEDs
Fizika i Tekhnika Poluprovodnikov, 49:6 (2015), 847–855
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Irreversible changes in $\mathrm{VO}_{2}$ films at picosecond laser radiation
Fizika Tverdogo Tela, 26:11 (1984), 3487–3489
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Picosecond spectroscopy of semiconductor metal transition in $\mathrm{VO}_{2}$ films
Fizika Tverdogo Tela, 26:5 (1984), 1463–1467
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Induced optical anisotropy of $\mathrm{VO}_{2}$ films during picosecond excitation
Fizika Tverdogo Tela, 25:6 (1983), 1890–1892
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