Aleksandrov O V

Publications in Math-Net.Ru

1. Model of behavior of MOS structures during radiation-thermal treatments
   
   Zhurnal Tekhnicheskoi Fiziki, 94:11 (2024),  1843–1847
2. Early formation of surface states in MOS structures under ionizing irradiation
   
   Fizika Tverdogo Tela, 65:5 (2023),  762–766
3. Model of breakdown of MOS-structures by the mechanism of anode hydrogen release
   
   Fizika i Tekhnika Poluprovodnikov, 57:9 (2023),  784–788
4. Dispersive transport of Hole polarons in MOS-structures after the ionizing irradiation
   
   Fizika i Tekhnika Poluprovodnikov, 56:12 (2022),  1154–1158
5. Dimensional effect in MOS-structures under ionizing irradiation
   
   Fizika i Tekhnika Poluprovodnikov, 56:6 (2022),  591–595
6. Effect of ionizing radiation on charge distribution and breakdown of mosfets
   
   Fizika i Tekhnika Poluprovodnikov, 56:2 (2022),  250–253
7. Latent accumulation of surface states in MOS structures after exposure to ionizing radiation
   
   Fizika i Tekhnika Poluprovodnikov, 55:7 (2021),  559–563
8. The effect of the ionizing radiation intensity on the response of MOS structures
   
   Fizika i Tekhnika Poluprovodnikov, 55:2 (2021),  152–158
9. Dispersive transport of hydrogen in MOS structures after exposure to ionizing radiation
   
   Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1029–1033
10. Model of the effect of the gate bias on MOS structures under ionizing radiation
    
    Fizika i Tekhnika Poluprovodnikov, 54:2 (2020),  189–194
11. Model of the negative-bias temperature instability of $p$-MOS transistors
    
    Fizika i Tekhnika Poluprovodnikov, 54:2 (2020),  181–188
12. Influence of annealing temperature on electrically active centers in silicon implanted with germanium ions
    
    Fizika i Tekhnika Poluprovodnikov, 53:2 (2019),  161–164
13. Charge accumulation in MOS structures with a polysilicon gate under tunnel injection
    
    Fizika i Tekhnika Poluprovodnikov, 52:13 (2018),  1625–1630
14. Model for charge accumulation in $n$- and $p$-MOS transistors during tunneling electron injection from a gate
    
    Fizika i Tekhnika Poluprovodnikov, 52:6 (2018),  637–642
15. Influence of traps in silicon dioxide on the breakdown of MOS structures
    
    Fizika i Tekhnika Poluprovodnikov, 51:8 (2017),  1105–1109
16. Growth of silicon nanoclusters in thermal silicon dioxide under annealing in an atmosphere of nitrogen
    
    Fizika i Tekhnika Poluprovodnikov, 50:6 (2016),  807–810
17. On the effect of bias on the behavior of MOS structures subjected to ionizing radiation
    
    Fizika i Tekhnika Poluprovodnikov, 49:6 (2015),  793–798
18. Formation of donor centers upon the annealing of silicon light-emitting structures implanted with oxygen ions
    
    Fizika i Tekhnika Poluprovodnikov, 49:3 (2015),  418–420
19. Model of the behavior of MOS structures under ionizing irradiation
    
    Fizika i Tekhnika Poluprovodnikov, 48:4 (2014),  523–528
20. Model of boron diffusion from gas phase in silicon carbide
    
    Fizika i Tekhnika Poluprovodnikov, 45:6 (2011),  721–728
21. A model of formation of fixed charge in thermal silicon dioxide
    
    Fizika i Tekhnika Poluprovodnikov, 45:4 (2011),  474–480
22. Influence of radiation-induced defects injected by $\alpha$-particles on back currents of silicon $p{-}n$ junctions
    
    Fizika i Tekhnika Poluprovodnikov, 26:5 (1992),  868–871
23. Kinetics of phosphorus solid solution decomposition in diffused $\mathrm{Si}$ layers
    
    Fizika Tverdogo Tela, 31:10 (1989),  182–188
24. Low temperature structural instability of the high $T_{c}$ superconductor $\mathrm{YBa}_{2}\mathrm{Cu}_{3}\mathrm{O}_{7-x}$
    
    Fizika Tverdogo Tela, 30:7 (1988),  2052–2057
25. Complex-formation at phosphorus diffusion into silicon
    
    Fizika Tverdogo Tela, 26:2 (1984),  632–634