Nevedomskiy Vladimir Nikolaevich

Publications in Math-Net.Ru

1. Phase formation and thermal analysis in the LaPO$_4$–GdPO$_4$–H$_2$O system
   
   Nanosystems: Physics, Chemistry, Mathematics, 15:6 (2024),  781–792
2. Magnetic and photocatalytic properties of BiFeO$_3$ nanoparticles formed during the heat treatment of hydroxides coprecipitated in a microreactor with intense swirling flows
   
   Nanosystems: Physics, Chemistry, Mathematics, 15:3 (2024),  369–379
3. Pyrochlore phase in the Bi$_2$O$_3$–Fe$_2$O$_3$–WO$_3$–(H$_2$O) system: its stability field in the low-temperature region of the phase diagram and thermal stability
   
   Nanosystems: Physics, Chemistry, Mathematics, 15:2 (2024),  240–254
4. The influence of the chemical composition of the surrounding layers on the optical properties of InGaP(As) quantum dots
   
   Fizika i Tekhnika Poluprovodnikov, 58:10 (2024),  529–532
5. Study of the structural and optical properties of InGaAs quantum dots
   
   Fizika i Tekhnika Poluprovodnikov, 58:6 (2024),  318–325
6. Synthesis under hydrothermal conditions and structural transformations of nanocrystals in the LaPO$_4$–YPO$_4$–(H$_2$O) system
   
   Nanosystems: Physics, Chemistry, Mathematics, 14:6 (2023),  660–671
7. Agglomeration of magnetite nanoparticles with citrate shell in an aqueous magnetic fluid
   
   Nanosystems: Physics, Chemistry, Mathematics, 14:3 (2023),  334–341
8. Influence of using different types of microreactors on the formation of nanocrystalline BiFeO$_3$
   
   Nanosystems: Physics, Chemistry, Mathematics, 14:1 (2023),  120–126
9. Investigation of photoluminescence in the InGaAs/GaAs system with 1100-nm range quantum dots
   
   Fizika i Tekhnika Poluprovodnikov, 57:1 (2023),  63–70
10. Study of active regions based on multiperiod GaAsN/InAs superlattice
    
    Fizika i Tekhnika Poluprovodnikov, 56:10 (2022),  1002–1010
11. Heterostructure of a 2.5 THz range quantum-cascade detector
    
    Fizika i Tekhnika Poluprovodnikov, 56:3 (2022),  357–362
12. Peculiarities of growth of InAs quantum dot arrays with low surface density by molecular beam epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:24 (2022),  42–46
13. The features of the layers growth in stressed InAs/GaSb superlattices
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:3 (2022),  10–13
14. Investigation of the characteristics of the InGaAs/InAlGaAs superlattice for 1300 nm range vertical-cavity surface emitting lasers
    
    Zhurnal Tekhnicheskoi Fiziki, 91:12 (2021),  2008–2017
15. Studying the optical and structural properties of three-dimensional InGaP(As) islands formed by substitution of elements of the fifth group
    
    Zhurnal Tekhnicheskoi Fiziki, 90:12 (2020),  2139–2142
16. Electrical and photoelectric properties of $\alpha$-Si/SiO$_{2}$ and $\alpha$-Ge/SiO$_{2}$ multilayer nanostructures on $p$-Si substrates annealed at various temperatures
    
    Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1112–1116
17. 1.55 $\mu$m-range vertical cavity surface emitting lasers, manufactured by wafer fusion of heterostuctures grown by solid-source molecular beam epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1088–1096
18. Comparative analysis of the optical and physical properties of inas and InAs, In$_{0.8}$Ga$_{0.2}$As quantum dots and solar cells based on them
    
    Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1079–1087
19. Interaction of fluorocarbon with silicon monoxide and processes of SiC nanowire formation
    
    Fizika i Tekhnika Poluprovodnikov, 54:8 (2020),  753–765
20. Ge/Si core/shell quantum dots in an alumina matrix: influence of the annealing temperature on the optical properties
    
    Fizika i Tekhnika Poluprovodnikov, 54:2 (2020),  129–137
21. The influence of the parameters of a short-period InGaAs/InGaAlAs superlattice on photoluminescence efficiency
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:22 (2020),  27–30
22. The effect of thermal treatment on properties of composite silicon–carbon anodes for lithium-ion batteries
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:3 (2020),  14–18
23. Examination of the capabilities of metalorganic vapor-phase epitaxy in fabrication of thin InAs/GaSb layers
    
    Zhurnal Tekhnicheskoi Fiziki, 89:10 (2019),  1592–1597
24. Weakly ordered nanostructured silver disilicate and its colloidal solutions: preparation and properties
    
    Zhurnal Tekhnicheskoi Fiziki, 89:6 (2019),  938–947
25. Spontaneous emission and lasing of a two-wavelength quantum-cascade laser
    
    Fizika i Tekhnika Poluprovodnikov, 53:3 (2019),  365–369
26. On the possibility of manufacturing strained InAs/GaSb superlattices by the mocvd method
    
    Fizika i Tekhnika Poluprovodnikov, 53:2 (2019),  273–276
27. High-power quantum-cascade lasers emitting in the 8-$\mu$m wavelength range
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019),  48–51
28. Lasers based on quantum well-dots emitting in the 980- and 1080-nm optical ranges
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:4 (2019),  42–45
29. Lasing in 9.6-$\mu$m quantum cascade lasers
    
    Zhurnal Tekhnicheskoi Fiziki, 88:10 (2018),  1559–1563
30. Multilayer quantum well–dot InGaAs heterostructures in GaAs-based photovoltaic converters
    
    Fizika i Tekhnika Poluprovodnikov, 52:10 (2018),  1131–1136
31. Heterostructures of single-wavelength and dual-wavelength quantum-cascade lasers
    
    Fizika i Tekhnika Poluprovodnikov, 52:6 (2018),  597–602
32. Bimodality in arrays of In$_{0.4}$Ga$_{0.6}$As hybrid quantum-confined heterostructures grown on GaAs substrates
    
    Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  57–62
33. Emission regimes of 1.06 $\mu$m spectral bandwidth two-sectional lasers with quantum dot based active layer
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:21 (2018),  30–39
34. Epitaxial InGaAs/InAlAs/AlAs structures for heterobarrier varactors with low leakage current
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:19 (2018),  16–23
35. Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors
    
    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1484–1488
36. On the delta-type doping of GaAs-based heterostructures with manganese compounds
    
    Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1189–1195
37. InSb quantum dots produced by liquid-phase epitaxy on InGaAsSb/GaSb substrates
    
    Fizika i Tekhnika Poluprovodnikov, 51:8 (2017),  1146–1150
38. InAs QDs in a metamorphic In$_{0.25}$Ga$_{0.75}$As matrix, grown by MOCVD
    
    Fizika i Tekhnika Poluprovodnikov, 51:5 (2017),  704–710
39. Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4$^\circ$ substrates
    
    Fizika i Tekhnika Poluprovodnikov, 51:2 (2017),  276–280
40. Heterostructures for quantum-cascade lasers of the wavelength range of 7–8 $\mu$m
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:14 (2017),  64–71
41. Optical properties of metamorphic GaAs/InAlGaAs/InGaAs heterostructures with InAs/InGaAs quantum wells, emitting light in the 1250–1400-nm spectral range
    
    Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  624–627
42. Laser generation at 1.3 $\mu$m in vertical microcavities containing InAs/InGaAs quantum dot arrays under optical pumping
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:19 (2016),  70–79
43. InAs/GaSb superlattices fabricated by metalorganic chemical vapor deposition
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:2 (2016),  79–84
44. Crystallization behavior and morphological features of YFeO$_3$ nanocrystallites obtainedby glycine-nitrate combustion
    
    Nanosystems: Physics, Chemistry, Mathematics, 6:6 (2015),  866–874
45. Spatially correlated two-dimensional arrays of semiconductor and metal quantum dots in GaAs-based heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 49:12 (2015),  1710–1713
46. Plasmon resonance in new AsSb–AlGaAs metal–semiconductor metamaterials
    
    Fizika i Tekhnika Poluprovodnikov, 49:12 (2015),  1635–1639
47. Design concepts of monolithic metamorphic vertical-cavity surface-emitting lasers for the 1300–1550 nm spectral range
    
    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1569–1573
48. Metamorphic distributed Bragg reflectors for the 1440–1600 nm spectral range: Epitaxy, formation, and regrowth of mesa structures
    
    Fizika i Tekhnika Poluprovodnikov, 49:10 (2015),  1434–1438
49. Emission spectra of a laser based on an In(Ga)As/GaAs quantum-dot superlattice
    
    Fizika i Tekhnika Poluprovodnikov, 49:10 (2015),  1379–1385
50. Fabrication of carbon nanowires by pyrolysis of aqueous solution of sugar within asbestos nanofibers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:9 (2015),  89–95
51. Effect of local structural defects on the precipitation of as in the vicinity of InAs quantum dots in a GaAs matrix
    
    Fizika i Tekhnika Poluprovodnikov, 48:11 (2014),  1578–1582
52. Influence of GaAs spacer-layer thickness on quantum coupling and optical polarization in a ten-layer system of vertically correlated InAs/GaAs quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 48:8 (2014),  1059–1064
53. Electron microscopy of GaAs-based structures with InAs and As quantum dots separated by an AlAs barrier
    
    Fizika i Tekhnika Poluprovodnikov, 47:9 (2013),  1196–1203
54. (In,Mn)As quantum dots: Molecular-beam epitaxy and optical properties
    
    Fizika i Tekhnika Poluprovodnikov, 47:8 (2013),  1033–1036
55. Optical anisotropy of InGaAs quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 47:1 (2013),  87–91
56. Polarization dependences of electroluminescence and absorption of vertically correlated InAs/GaAs QDs
    
    Fizika i Tekhnika Poluprovodnikov, 46:1 (2012),  96–102
57. Influence of the position of InGaAs quantum dot array on the spectral characteristics of AlGaAs/GaAs photovoltaic converters
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:22 (2012),  43–49
58. Mechanical properties of nanoscrolls based on Mg$_3$Si$_2$O$_5$(OH)$_4$
    
    Nanosystems: Physics, Chemistry, Mathematics, 2:2 (2011),  48–57
59. Electron microscopy of GaAs Structures with InAs and as quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 45:12 (2011),  1642–1645
60. Room-temperature optical absorption in the InAs/GaAs quantum-dot superlattice under an electric field
    
    Fizika i Tekhnika Poluprovodnikov, 45:8 (2011),  1095–1101
61. Wannier–Stark states in a superlattice of InAs/GaAs quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 44:6 (2010),  790–794