Mizerov Mikhail Nikolaevich

Publications in Math-Net.Ru

1. Changes in the photoluminescence properties of semiconductor heterostructures after ion-beam etching
   
   Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1579–1583
2. On the possibility of manufacturing strained InAs/GaSb superlattices by the mocvd method
   
   Fizika i Tekhnika Poluprovodnikov, 53:2 (2019),  273–276
3. Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation
   
   Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  245–249
4. InAs/GaSb superlattices fabricated by metalorganic chemical vapor deposition
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:2 (2016),  79–84
5. Photovoltaic converters of concentrated sunlight, based on InGaAsP(1.0 eV)/InP heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 49:5 (2015),  715–718
6. MOVPE of III–N LED structures with short technological process
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:5 (2015),  9–17
7. Fabrication and study of $p$–$n$ structures with crystalline inclusions in the space-charge region
   
   Fizika i Tekhnika Poluprovodnikov, 47:12 (2013),  1677–1680
8. InGaN/GaN heterostructures grown by submonolayer deposition
   
   Fizika i Tekhnika Poluprovodnikov, 46:10 (2012),  1357–1362
9. Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region
   
   Fizika i Tekhnika Poluprovodnikov, 46:10 (2012),  1304–1308
10. AlInAsSb and AlGaInAsSb solid solutions for barrier layers of 3–5 $\mu$m spectral range radiation sources obtained by the method of vapor-phase epitaxy from organometallic compounds
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:19 (2012),  66–74
11. A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices
    
    Fizika i Tekhnika Poluprovodnikov, 44:6 (2010),  837–840
12. A study of thermal processes in high-power InGaN/GaN flip-chip LEDs by IR thermal imaging microscopy
    
    Fizika i Tekhnika Poluprovodnikov, 44:3 (2010),  390–396
13. Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes
    
    Fizika i Tekhnika Poluprovodnikov, 44:1 (2010),  96–100
14. CONCENTRATING HOLOGRAPHIC DIFFRACTION LATTICE .2. EXPERIMENTAL RESULTS
    
    Zhurnal Tekhnicheskoi Fiziki, 54:10 (1984),  1948–1955
15. CONCENTRATING HOLOGRAPHIC DIFFRACTION LATTICE .1. THEORY
    
    Zhurnal Tekhnicheskoi Fiziki, 54:10 (1984),  1942–1947