Publications in Math-Net.Ru
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Light-emmiting diodes based on silicon carbide irradiated by fast electrons
Fizika i Tekhnika Poluprovodnikov, 26:11 (1992), 1857–1860
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On the cause of origination of phosphorus diffusion profile near-surface plateau in silicon
Fizika i Tekhnika Poluprovodnikov, 26:2 (1992), 339–351
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On the nature of point defects generated due to acceptor-impurity diffusion in silicon carbide
Fizika i Tekhnika Poluprovodnikov, 26:2 (1992), 270–279
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EFFECT OF PROTON IRRADIATION ON ELECTRIC PROPERTIES OF SILICON CARBIDES
Zhurnal Tekhnicheskoi Fiziki, 54:8 (1984), 1622–1624
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Franz–Keldysh Effect in $p{-}n$ Junctions on Silicon Carbide
Fizika i Tekhnika Poluprovodnikov, 18:2 (1984), 385–388
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