Luchinin Viktor Viktorovich

Publications in Math-Net.Ru

1. Application of RIE-technology to control responsivity of 4H-SiC photodiodes
   
   Fizika i Tekhnika Poluprovodnikov, 56:10 (2022),  997–1001
2. On the formation of low-resistivity contacts for 4H-SiC bipolar devices
   
   Fizika i Tekhnika Poluprovodnikov, 56:6 (2022),  607–610
3. Determination of thickness and doping features of multilayer $4H$–$\mathrm{SiC}$ structures by frequency analysis of IR reflection spectra
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:2 (2022),  34–36
4. High-power 4$H$-SiC mosfet with an epitaxial buried channel
   
   Fizika i Tekhnika Poluprovodnikov, 54:1 (2020),  79–84
5. Comparative ellipsometric analysis of silicon carbide polytypes 4$H$, 15$R$, and 6$H$ produced by a modified Lely method in the same growth process
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:19 (2020),  28–31
6. Investigation of the hardness and Young's modulus in thin near-surface layers of silicon carbide from the Si- and C-faces by nanoindentation
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:15 (2020),  36–38
7. Frequency dependence of an electromagnetic absorption coefficient in magnetic fluid
   
   Zhurnal Tekhnicheskoi Fiziki, 89:6 (2019),  948–951
8. Formation of highly conductive and optically transparent multilayer graphene films by carbonization of polyimide Langmuir–Blodgett films
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:9 (2019),  50–54
9. Thermal-conductive boards based on aluminum with an Al$_{2}$O$_{3}$ nanostructured layer for products of power electronics
   
   Zhurnal Tekhnicheskoi Fiziki, 88:11 (2018),  1678–1680
10. Planarization of a surface of nanoporous silica–titania composition by atomic-molecular chemical assembly
    
    Zhurnal Tekhnicheskoi Fiziki, 87:5 (2017),  736–740
11. Method for increasing the carrier mobility in the channel of the 4$H$-SiC MOSFET
    
    Fizika i Tekhnika Poluprovodnikov, 50:6 (2016),  839–842
12. Specific features of the current–voltage characteristics of SiO$_{2}$/4$H$-SiC MIS structures with phosphorus implanted into silicon carbide
    
    Fizika i Tekhnika Poluprovodnikov, 50:1 (2016),  103–105
13. On the ion implantation of phosphorus as a method for the passivation of states at the interface between 4H-SiC and SiO$_2$ produced by thermal oxidation in dry oxygen
    
    Fizika i Tekhnika Poluprovodnikov, 48:12 (2014),  1621–1625
14. EVOLUTION REGULARITY OF CRYSTAL-STRUCTURES DURING THE SYNTHESIS OF SUBSTANCES, CONTAINING A GREAT DEAL OF STRUCTURALLY STABLE CONDITIONS
    
    Zhurnal Tekhnicheskoi Fiziki, 54:7 (1984),  1388–1390