|
|
Publications in Math-Net.Ru
-
Experimental observation of $s$-component of superconducting pairing in thin disordered HTSC films based on YBCO
Fizika Tverdogo Tela, 62:9 (2020), 1434–1439
-
Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride
Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 274–278
-
Effect of ion doping on the dislocation-related photoluminescence in Si$^+$-implanted silicon
Fizika i Tekhnika Poluprovodnikov, 48:2 (2014), 212–216
-
Control of emission wavelength for InGaAs/GaAs quantum wells and laser structures on their basis by means of proton irradiation
Fizika i Tekhnika Poluprovodnikov, 44:11 (2010), 1494–1497
-
Controlling the wavelength of InGaAs/GaAs/InGaP lasers by ion implantation
Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:4 (2010), 81–87
-
RESISTOMETRIC STUDY METHOD OF KINETICS OF ION-IMPLANTATION PROCESSES
Zhurnal Tekhnicheskoi Fiziki, 54:11 (1984), 2263–2266
-
Characteristic X-Ray Radiation Study
of Disturbances in Low-Lying Levels
in InSb Implanted Single Crystals
Fizika i Tekhnika Poluprovodnikov, 18:1 (1984), 189–191
© , 2026